JPS6364000B2 - - Google Patents
Info
- Publication number
- JPS6364000B2 JPS6364000B2 JP1554981A JP1554981A JPS6364000B2 JP S6364000 B2 JPS6364000 B2 JP S6364000B2 JP 1554981 A JP1554981 A JP 1554981A JP 1554981 A JP1554981 A JP 1554981A JP S6364000 B2 JPS6364000 B2 JP S6364000B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- voltage
- line
- transistors
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000004913 activation Effects 0.000 claims 2
- 210000004027 cell Anatomy 0.000 description 58
- 239000000872 buffer Substances 0.000 description 20
- 238000010586 diagram Methods 0.000 description 15
- 230000006870 function Effects 0.000 description 9
- 230000015654 memory Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000000295 complement effect Effects 0.000 description 5
- 239000007943 implant Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000007599 discharging Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 210000000352 storage cell Anatomy 0.000 description 2
- 101100449986 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) MSB3 gene Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Landscapes
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Static Random-Access Memory (AREA)
- Compression, Expansion, Code Conversion, And Decoders (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11834880A | 1980-02-04 | 1980-02-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56156985A JPS56156985A (en) | 1981-12-03 |
| JPS6364000B2 true JPS6364000B2 (enrdf_load_stackoverflow) | 1988-12-09 |
Family
ID=22378028
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1554981A Granted JPS56156985A (en) | 1980-02-04 | 1981-02-04 | Decoder |
| JP62125658A Pending JPS63239691A (ja) | 1980-02-04 | 1987-05-22 | 半導体メモリバッファ |
| JP62125660A Granted JPS63127496A (ja) | 1980-02-04 | 1987-05-22 | 低電力消費記憶装置 |
| JP62125659A Granted JPS63239689A (ja) | 1980-02-04 | 1987-05-22 | 記憶装置 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62125658A Pending JPS63239691A (ja) | 1980-02-04 | 1987-05-22 | 半導体メモリバッファ |
| JP62125660A Granted JPS63127496A (ja) | 1980-02-04 | 1987-05-22 | 低電力消費記憶装置 |
| JP62125659A Granted JPS63239689A (ja) | 1980-02-04 | 1987-05-22 | 記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (4) | JPS56156985A (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5979492A (ja) * | 1982-10-29 | 1984-05-08 | Hitachi Micro Comput Eng Ltd | Ｅｐｒｏｍ装置 |
| JPS6050697A (ja) * | 1983-08-30 | 1985-03-20 | Toshiba Corp | 半導体集積回路 |
| JPH0666115B2 (ja) * | 1983-09-26 | 1994-08-24 | 株式会社東芝 | 半導体記憶装置 |
| JP3102642B2 (ja) * | 1989-01-09 | 2000-10-23 | 日本電信電話株式会社 | アドレスデコーダ |
| KR100246782B1 (ko) * | 1996-08-30 | 2000-03-15 | 김영환 | 메모리 셀 어레이 |
| JP4717983B2 (ja) * | 2000-06-14 | 2011-07-06 | 株式会社日立製作所 | 省消費電力型メモリモジュール及び計算機システム |
| JP2010176731A (ja) * | 2009-01-27 | 2010-08-12 | Toshiba Corp | 不揮発性半導体メモリ |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5727545B2 (enrdf_load_stackoverflow) * | 1972-11-06 | 1982-06-11 | ||
| JPS5011632A (enrdf_load_stackoverflow) * | 1973-06-01 | 1975-02-06 | ||
| JPS5710508B2 (enrdf_load_stackoverflow) * | 1974-01-11 | 1982-02-26 | ||
| JPS57667B2 (enrdf_load_stackoverflow) * | 1974-05-11 | 1982-01-07 | ||
| JPS5747515B2 (enrdf_load_stackoverflow) * | 1974-09-30 | 1982-10-09 | ||
| JPS5154788A (enrdf_load_stackoverflow) * | 1974-11-08 | 1976-05-14 | Nippon Electric Co | |
| JPS51128234A (en) * | 1975-04-30 | 1976-11-09 | Toshiba Corp | Mos-type semi-conductor memory |
| GB1497210A (en) * | 1975-05-13 | 1978-01-05 | Ncr Co | Matrix memory |
| JPS5612956B2 (enrdf_load_stackoverflow) * | 1975-09-01 | 1981-03-25 | ||
| JPS53108247A (en) * | 1976-12-27 | 1978-09-20 | Texas Instruments Inc | Electrically programmable floating gate semiconductor memory |
| JPS5484935A (en) * | 1977-12-20 | 1979-07-06 | Fujitsu Ltd | Address selection circuit |
| JPS5484936A (en) * | 1977-12-20 | 1979-07-06 | Fujitsu Ltd | Decoder circuit |
| JPS54136239A (en) * | 1978-04-14 | 1979-10-23 | Nec Corp | Integrated circuit |
| JPS6043586B2 (ja) * | 1978-05-24 | 1985-09-28 | 株式会社日立製作所 | アドレスデコ−ダ回路 |
-
1981
- 1981-02-04 JP JP1554981A patent/JPS56156985A/ja active Granted
-
1987
- 1987-05-22 JP JP62125658A patent/JPS63239691A/ja active Pending
- 1987-05-22 JP JP62125660A patent/JPS63127496A/ja active Granted
- 1987-05-22 JP JP62125659A patent/JPS63239689A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63239691A (ja) | 1988-10-05 |
| JPH0472320B2 (enrdf_load_stackoverflow) | 1992-11-17 |
| JPH0234119B2 (enrdf_load_stackoverflow) | 1990-08-01 |
| JPS63127496A (ja) | 1988-05-31 |
| JPS63239689A (ja) | 1988-10-05 |
| JPS56156985A (en) | 1981-12-03 |
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