JPS6362910B2 - - Google Patents
Info
- Publication number
- JPS6362910B2 JPS6362910B2 JP56111187A JP11118781A JPS6362910B2 JP S6362910 B2 JPS6362910 B2 JP S6362910B2 JP 56111187 A JP56111187 A JP 56111187A JP 11118781 A JP11118781 A JP 11118781A JP S6362910 B2 JPS6362910 B2 JP S6362910B2
- Authority
- JP
- Japan
- Prior art keywords
- junction
- base region
- type base
- depth
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000000206 photolithography Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000005215 recombination Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11118781A JPS5812360A (ja) | 1981-07-14 | 1981-07-14 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11118781A JPS5812360A (ja) | 1981-07-14 | 1981-07-14 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5812360A JPS5812360A (ja) | 1983-01-24 |
| JPS6362910B2 true JPS6362910B2 (ko) | 1988-12-05 |
Family
ID=14554693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11118781A Granted JPS5812360A (ja) | 1981-07-14 | 1981-07-14 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5812360A (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6190463A (ja) * | 1984-10-11 | 1986-05-08 | Hitachi Ltd | 半導体装置 |
| JPS6341075A (ja) * | 1986-08-07 | 1988-02-22 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
| JPH01290262A (ja) * | 1988-05-18 | 1989-11-22 | Fuji Electric Co Ltd | ゲートターンオフサイリスタの製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51121259A (en) * | 1975-04-17 | 1976-10-23 | Agency Of Ind Science & Technol | Semiconductor device |
| JPS51128266A (en) * | 1975-05-01 | 1976-11-09 | Sony Corp | Semiconductor unit |
| JPS5418286A (en) * | 1977-07-12 | 1979-02-10 | Toshiba Corp | Semiconductor device |
-
1981
- 1981-07-14 JP JP11118781A patent/JPS5812360A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51121259A (en) * | 1975-04-17 | 1976-10-23 | Agency Of Ind Science & Technol | Semiconductor device |
| JPS51128266A (en) * | 1975-05-01 | 1976-11-09 | Sony Corp | Semiconductor unit |
| JPS5418286A (en) * | 1977-07-12 | 1979-02-10 | Toshiba Corp | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5812360A (ja) | 1983-01-24 |
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