JPS6362901B2 - - Google Patents
Info
- Publication number
- JPS6362901B2 JPS6362901B2 JP60134151A JP13415185A JPS6362901B2 JP S6362901 B2 JPS6362901 B2 JP S6362901B2 JP 60134151 A JP60134151 A JP 60134151A JP 13415185 A JP13415185 A JP 13415185A JP S6362901 B2 JPS6362901 B2 JP S6362901B2
- Authority
- JP
- Japan
- Prior art keywords
- fet
- transistor
- region
- bipolar
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 8
- 239000002131 composite material Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000003321 amplification Effects 0.000 description 7
- 238000003199 nucleic acid amplification method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45278—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using BiFET transistors as the active amplifying circuit
- H03F3/45282—Long tailed pairs
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60134151A JPS6122662A (ja) | 1985-06-21 | 1985-06-21 | 半導体集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60134151A JPS6122662A (ja) | 1985-06-21 | 1985-06-21 | 半導体集積回路装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51135340A Division JPS5937860B2 (ja) | 1976-11-12 | 1976-11-12 | 半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6122662A JPS6122662A (ja) | 1986-01-31 |
| JPS6362901B2 true JPS6362901B2 (enrdf_load_stackoverflow) | 1988-12-05 |
Family
ID=15121658
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60134151A Granted JPS6122662A (ja) | 1985-06-21 | 1985-06-21 | 半導体集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6122662A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6395654A (ja) * | 1986-10-09 | 1988-04-26 | Nec Corp | ＢｉＣＭＯＳ集積回路 |
-
1985
- 1985-06-21 JP JP60134151A patent/JPS6122662A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6122662A (ja) | 1986-01-31 |
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