JPS6362392A - 反射防止層を有するｄｆｂレ−ザ - Google Patents
反射防止層を有するｄｆｂレ−ザInfo
- Publication number
- JPS6362392A JPS6362392A JP62215529A JP21552987A JPS6362392A JP S6362392 A JPS6362392 A JP S6362392A JP 62215529 A JP62215529 A JP 62215529A JP 21552987 A JP21552987 A JP 21552987A JP S6362392 A JPS6362392 A JP S6362392A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- semiconductor laser
- passive
- active region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 21
- 230000005855 radiation Effects 0.000 claims description 10
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 8
- 230000000737 periodic effect Effects 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 4
- 230000001427 coherent effect Effects 0.000 claims description 3
- 230000005670 electromagnetic radiation Effects 0.000 claims description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 7
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 244000046146 Pueraria lobata Species 0.000 description 1
- 235000010575 Pueraria lobata Nutrition 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- OEDMOCYNWLHUDP-UHFFFAOYSA-N bromomethanol Chemical compound OCBr OEDMOCYNWLHUDP-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
- H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8602204A NL8602204A (nl) | 1986-09-01 | 1986-09-01 | Dfb laser met anti-reflectielaag. |
| NL8602204 | 1986-09-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6362392A true JPS6362392A (ja) | 1988-03-18 |
Family
ID=19848479
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62215529A Pending JPS6362392A (ja) | 1986-09-01 | 1987-08-31 | 反射防止層を有するｄｆｂレ−ザ |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4833684A (fr) |
| EP (1) | EP0259919A1 (fr) |
| JP (1) | JPS6362392A (fr) |
| CA (1) | CA1280819C (fr) |
| NL (1) | NL8602204A (fr) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8729104D0 (en) * | 1987-12-14 | 1988-01-27 | British Telecomm | Anti-reflection coatings |
| NL8801667A (nl) * | 1988-07-01 | 1990-02-01 | Philips Nv | Fi - coating voor dfb/dbr laserdiodes. |
| US4942366A (en) * | 1989-03-21 | 1990-07-17 | General Electric Company | Amplifier device with coupled surface emitting grating |
| DE69404367T2 (de) * | 1993-03-25 | 1998-02-26 | Nec Corp | Planar-Vergrabene-Heterostruktur-Laserdiode mit zwei Kanälen und niedrigem Leckstrom |
| JP3558717B2 (ja) * | 1995-02-07 | 2004-08-25 | 富士通株式会社 | レーザダイオード、その製造方法、およびかかるレーザダイオードを使った光通信システム |
| US6219009B1 (en) | 1997-06-30 | 2001-04-17 | Harris Corporation | Tensioned cord/tie attachment of antenna reflector to inflatable radial truss support structure |
| US6477194B1 (en) * | 1999-11-15 | 2002-11-05 | Agere Systems Guardian Corp. | Low temperature distributed feedback laser with loss grating and method |
| US6678301B1 (en) | 2000-07-14 | 2004-01-13 | Triquint Technology Holding Co. | Apparatus and method for minimizing wavelength chirp of laser devices |
| US10359313B1 (en) | 2017-11-21 | 2019-07-23 | Innovative Photonic Solutions, Inc. | Dual wavelength Raman probe with spectral concatenation of data |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56138701A (en) * | 1980-03-31 | 1981-10-29 | Minolta Camera Co Ltd | Antireflection film |
| GB2082380A (en) * | 1980-08-18 | 1982-03-03 | Standard Telephones Cables Ltd | Injection laser |
| JPS60242689A (ja) * | 1984-05-16 | 1985-12-02 | Sharp Corp | 半導体レ−ザ素子 |
| GB8414454D0 (en) * | 1984-06-06 | 1984-07-11 | British Telecomm | Opto-electronic and electro-optic devices |
-
1986
- 1986-09-01 NL NL8602204A patent/NL8602204A/nl not_active Application Discontinuation
-
1987
- 1987-08-28 EP EP87201626A patent/EP0259919A1/fr not_active Ceased
- 1987-08-31 JP JP62215529A patent/JPS6362392A/ja active Pending
- 1987-09-01 CA CA000545809A patent/CA1280819C/fr not_active Expired - Lifetime
-
1988
- 1988-11-01 US US07/266,344 patent/US4833684A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CA1280819C (fr) | 1991-02-26 |
| NL8602204A (nl) | 1988-04-05 |
| EP0259919A1 (fr) | 1988-03-16 |
| US4833684A (en) | 1989-05-23 |
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