NL8602204A - Dfb laser met anti-reflectielaag. - Google Patents

Dfb laser met anti-reflectielaag. Download PDF

Info

Publication number
NL8602204A
NL8602204A NL8602204A NL8602204A NL8602204A NL 8602204 A NL8602204 A NL 8602204A NL 8602204 A NL8602204 A NL 8602204A NL 8602204 A NL8602204 A NL 8602204A NL 8602204 A NL8602204 A NL 8602204A
Authority
NL
Netherlands
Prior art keywords
layer
reflection layer
reflection
semiconductor laser
active
Prior art date
Application number
NL8602204A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8602204A priority Critical patent/NL8602204A/nl
Priority to EP87201626A priority patent/EP0259919A1/fr
Priority to JP62215529A priority patent/JPS6362392A/ja
Priority to CA000545809A priority patent/CA1280819C/fr
Publication of NL8602204A publication Critical patent/NL8602204A/nl
Priority to US07/266,344 priority patent/US4833684A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
NL8602204A 1986-09-01 1986-09-01 Dfb laser met anti-reflectielaag. NL8602204A (nl)

Priority Applications (5)

Application Number Priority Date Filing Date Title
NL8602204A NL8602204A (nl) 1986-09-01 1986-09-01 Dfb laser met anti-reflectielaag.
EP87201626A EP0259919A1 (fr) 1986-09-01 1987-08-28 Laser à semi-conducteur à réflecteur distribué comportant une couche antiréflexion
JP62215529A JPS6362392A (ja) 1986-09-01 1987-08-31 反射防止層を有するｄｆｂレ−ザ
CA000545809A CA1280819C (fr) 1986-09-01 1987-09-01 Laser a retroaction repartie a couche anti-reflexion
US07/266,344 US4833684A (en) 1986-09-01 1988-11-01 Distributed feedback laser with anti-reflection layer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8602204A NL8602204A (nl) 1986-09-01 1986-09-01 Dfb laser met anti-reflectielaag.
NL8602204 1986-09-01

Publications (1)

Publication Number Publication Date
NL8602204A true NL8602204A (nl) 1988-04-05

Family

ID=19848479

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8602204A NL8602204A (nl) 1986-09-01 1986-09-01 Dfb laser met anti-reflectielaag.

Country Status (5)

Country Link
US (1) US4833684A (fr)
EP (1) EP0259919A1 (fr)
JP (1) JPS6362392A (fr)
CA (1) CA1280819C (fr)
NL (1) NL8602204A (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8729104D0 (en) * 1987-12-14 1988-01-27 British Telecomm Anti-reflection coatings
NL8801667A (nl) * 1988-07-01 1990-02-01 Philips Nv Fi - coating voor dfb/dbr laserdiodes.
US4942366A (en) * 1989-03-21 1990-07-17 General Electric Company Amplifier device with coupled surface emitting grating
DE69404367T2 (de) * 1993-03-25 1998-02-26 Nec Corp Planar-Vergrabene-Heterostruktur-Laserdiode mit zwei Kanälen und niedrigem Leckstrom
JP3558717B2 (ja) * 1995-02-07 2004-08-25 富士通株式会社 レーザダイオード、その製造方法、およびかかるレーザダイオードを使った光通信システム
US6219009B1 (en) 1997-06-30 2001-04-17 Harris Corporation Tensioned cord/tie attachment of antenna reflector to inflatable radial truss support structure
US6477194B1 (en) * 1999-11-15 2002-11-05 Agere Systems Guardian Corp. Low temperature distributed feedback laser with loss grating and method
US6678301B1 (en) 2000-07-14 2004-01-13 Triquint Technology Holding Co. Apparatus and method for minimizing wavelength chirp of laser devices
US10359313B1 (en) 2017-11-21 2019-07-23 Innovative Photonic Solutions, Inc. Dual wavelength Raman probe with spectral concatenation of data

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56138701A (en) * 1980-03-31 1981-10-29 Minolta Camera Co Ltd Antireflection film
GB2082380A (en) * 1980-08-18 1982-03-03 Standard Telephones Cables Ltd Injection laser
JPS60242689A (ja) * 1984-05-16 1985-12-02 Sharp Corp 半導体レ−ザ素子
GB8414454D0 (en) * 1984-06-06 1984-07-11 British Telecomm Opto-electronic and electro-optic devices

Also Published As

Publication number Publication date
CA1280819C (fr) 1991-02-26
EP0259919A1 (fr) 1988-03-16
US4833684A (en) 1989-05-23
JPS6362392A (ja) 1988-03-18

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BV The patent application has lapsed