JPS6360547B2 - - Google Patents
Info
- Publication number
- JPS6360547B2 JPS6360547B2 JP55077736A JP7773680A JPS6360547B2 JP S6360547 B2 JPS6360547 B2 JP S6360547B2 JP 55077736 A JP55077736 A JP 55077736A JP 7773680 A JP7773680 A JP 7773680A JP S6360547 B2 JPS6360547 B2 JP S6360547B2
- Authority
- JP
- Japan
- Prior art keywords
- mos
- fet
- type
- breakdown voltage
- impurity concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7773680A JPS574151A (en) | 1980-06-11 | 1980-06-11 | Mos integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7773680A JPS574151A (en) | 1980-06-11 | 1980-06-11 | Mos integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS574151A JPS574151A (en) | 1982-01-09 |
| JPS6360547B2 true JPS6360547B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-11-24 |
Family
ID=13642186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7773680A Granted JPS574151A (en) | 1980-06-11 | 1980-06-11 | Mos integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS574151A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58159363A (ja) * | 1982-03-17 | 1983-09-21 | Nec Corp | 半導体集積回路の入出力保護装置 |
| JPS5969957A (ja) * | 1982-10-15 | 1984-04-20 | Nec Corp | 出力保護装置 |
| JPS59191371A (ja) * | 1983-04-14 | 1984-10-30 | Nec Corp | 相補型ｍｏｓ電界効果装置 |
| JPS6010767A (ja) * | 1983-06-30 | 1985-01-19 | Fujitsu Ltd | 半導体装置 |
| JP2508826B2 (ja) * | 1987-11-24 | 1996-06-19 | 日本電気株式会社 | 半導体装置 |
| JP2009099679A (ja) * | 2007-10-15 | 2009-05-07 | Mitsumi Electric Co Ltd | Ｍｏｓトランジスタ及びこれを用いた半導体集積回路装置 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55132065A (en) * | 1979-04-02 | 1980-10-14 | Sharp Corp | Cmos circuit |
-
1980
- 1980-06-11 JP JP7773680A patent/JPS574151A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS574151A (en) | 1982-01-09 |