JPS6359259B2 - - Google Patents
Info
- Publication number
- JPS6359259B2 JPS6359259B2 JP54130114A JP13011479A JPS6359259B2 JP S6359259 B2 JPS6359259 B2 JP S6359259B2 JP 54130114 A JP54130114 A JP 54130114A JP 13011479 A JP13011479 A JP 13011479A JP S6359259 B2 JPS6359259 B2 JP S6359259B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- opening
- photoresist
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/47—Resistors having no potential barriers
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13011479A JPS5654059A (en) | 1979-10-09 | 1979-10-09 | Roduction of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13011479A JPS5654059A (en) | 1979-10-09 | 1979-10-09 | Roduction of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5654059A JPS5654059A (en) | 1981-05-13 |
JPS6359259B2 true JPS6359259B2 (enrdf_load_stackoverflow) | 1988-11-18 |
Family
ID=15026279
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13011479A Granted JPS5654059A (en) | 1979-10-09 | 1979-10-09 | Roduction of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5654059A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58122769A (ja) * | 1982-01-18 | 1983-07-21 | Seiko Epson Corp | 半導体装置の製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5374361A (en) * | 1976-12-15 | 1978-07-01 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
-
1979
- 1979-10-09 JP JP13011479A patent/JPS5654059A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5654059A (en) | 1981-05-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4041518A (en) | MIS semiconductor device and method of manufacturing the same | |
US4074300A (en) | Insulated gate type field effect transistors | |
US3475234A (en) | Method for making mis structures | |
JPH10303372A (ja) | 半導体集積回路およびその製造方法 | |
JPS63141349A (ja) | 集積半導体回路とその製造方法 | |
JPS6152584B2 (enrdf_load_stackoverflow) | ||
US5759887A (en) | Semiconductor device and a method of manufacturing a semiconductor device | |
JP3128267B2 (ja) | 半導体集積回路装置の製造方法 | |
JP3489602B2 (ja) | 半導体装置およびその製造方法 | |
KR100258385B1 (ko) | 반도체 장치 | |
JP3054937B2 (ja) | 半導体装置とその製造方法 | |
JPS6359259B2 (enrdf_load_stackoverflow) | ||
JPH0396267A (ja) | 半導体集積回路装置 | |
JPS6195565A (ja) | エミツタ直列抵抗を有するバイポーラトランジスタの製造方法 | |
JP3113202B2 (ja) | 半導体装置 | |
JPH0366815B2 (enrdf_load_stackoverflow) | ||
JP3651901B2 (ja) | 横型バイポーラトランジスタの製造方法 | |
JP3688756B2 (ja) | 半導体装置およびその製造方法 | |
JPH0258367A (ja) | 半導体装置 | |
JP2000058755A (ja) | 半導体装置とその製造方法 | |
JPH0463545B2 (enrdf_load_stackoverflow) | ||
JP2000216254A (ja) | 半導体装置の製造方法 | |
JPH10223842A (ja) | 半導体集積回路およびその製造方法 | |
JPS63155663A (ja) | 半導体装置の製造方法 | |
JPH01260849A (ja) | 半導体装置の製造方法 |