JPH0463545B2 - - Google Patents
Info
- Publication number
- JPH0463545B2 JPH0463545B2 JP57031346A JP3134682A JPH0463545B2 JP H0463545 B2 JPH0463545 B2 JP H0463545B2 JP 57031346 A JP57031346 A JP 57031346A JP 3134682 A JP3134682 A JP 3134682A JP H0463545 B2 JPH0463545 B2 JP H0463545B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- opening
- resistor
- terminal
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57031346A JPS58147145A (ja) | 1982-02-26 | 1982-02-26 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57031346A JPS58147145A (ja) | 1982-02-26 | 1982-02-26 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58147145A JPS58147145A (ja) | 1983-09-01 |
JPH0463545B2 true JPH0463545B2 (enrdf_load_stackoverflow) | 1992-10-12 |
Family
ID=12328664
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57031346A Granted JPS58147145A (ja) | 1982-02-26 | 1982-02-26 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58147145A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6151832A (ja) * | 1984-08-22 | 1986-03-14 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置およびその製造方法 |
US5355014A (en) * | 1993-03-03 | 1994-10-11 | Bhasker Rao | Semiconductor device with integrated RC network and Schottky diode |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS516514B2 (enrdf_load_stackoverflow) * | 1971-08-30 | 1976-02-28 |
-
1982
- 1982-02-26 JP JP57031346A patent/JPS58147145A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58147145A (ja) | 1983-09-01 |
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