JPS6357966B2 - - Google Patents
Info
- Publication number
- JPS6357966B2 JPS6357966B2 JP3616682A JP3616682A JPS6357966B2 JP S6357966 B2 JPS6357966 B2 JP S6357966B2 JP 3616682 A JP3616682 A JP 3616682A JP 3616682 A JP3616682 A JP 3616682A JP S6357966 B2 JPS6357966 B2 JP S6357966B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- sio
- zno
- film thickness
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 35
- 239000010409 thin film Substances 0.000 claims description 29
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3616682A JPS58153412A (ja) | 1982-03-08 | 1982-03-08 | 圧電薄膜複合振動子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3616682A JPS58153412A (ja) | 1982-03-08 | 1982-03-08 | 圧電薄膜複合振動子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58153412A JPS58153412A (ja) | 1983-09-12 |
| JPS6357966B2 true JPS6357966B2 (zh) | 1988-11-14 |
Family
ID=12462169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3616682A Granted JPS58153412A (ja) | 1982-03-08 | 1982-03-08 | 圧電薄膜複合振動子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58153412A (zh) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4719383A (en) * | 1985-05-20 | 1988-01-12 | The United States Of America As Represented By The United States Department Of Energy | Piezoelectric shear wave resonator and method of making same |
| US5162691A (en) * | 1991-01-22 | 1992-11-10 | The United States Of America As Represented By The Secretary Of The Army | Cantilevered air-gap type thin film piezoelectric resonator |
| US5233259A (en) * | 1991-02-19 | 1993-08-03 | Westinghouse Electric Corp. | Lateral field FBAR |
| DE69714909T2 (de) * | 1996-05-27 | 2003-04-30 | Ngk Insulators Ltd | Piezoelektrisches Element des Dünnschichttyps |
| US6936837B2 (en) | 2001-05-11 | 2005-08-30 | Ube Industries, Ltd. | Film bulk acoustic resonator |
| JP2005236337A (ja) | 2001-05-11 | 2005-09-02 | Ube Ind Ltd | 薄膜音響共振器及びその製造方法 |
| WO2004001964A1 (ja) | 2002-06-20 | 2003-12-31 | Ube Industries, Ltd. | 薄膜圧電共振器、薄膜圧電デバイスおよびその製造方法 |
| JP2004158970A (ja) | 2002-11-05 | 2004-06-03 | Ube Ind Ltd | 薄膜圧電共振器を用いた帯域フィルタ |
| JP3889351B2 (ja) | 2002-12-11 | 2007-03-07 | Ｔｄｋ株式会社 | デュプレクサ |
| JP2004304490A (ja) | 2003-03-31 | 2004-10-28 | Tdk Corp | 薄膜圧電共振子の製造方法、薄膜圧電共振子の製造装置、薄膜圧電共振子および電子部品 |
| JP2004320127A (ja) | 2003-04-11 | 2004-11-11 | Tdk Corp | 薄膜圧電共振子の製造方法、薄膜圧電共振子の製造装置、薄膜圧電共振子および電子部品 |
| JP4534158B2 (ja) | 2003-12-19 | 2010-09-01 | 宇部興産株式会社 | 圧電薄膜デバイスの製造方法 |
| FI20095988A0 (fi) * | 2009-09-28 | 2009-09-28 | Valtion Teknillinen | Mikromekaaninen resonaattori ja menetelmä sen valmistamiseksi |
-
1982
- 1982-03-08 JP JP3616682A patent/JPS58153412A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58153412A (ja) | 1983-09-12 |
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