JPS6355877B2 - - Google Patents

Info

Publication number
JPS6355877B2
JPS6355877B2 JP58140606A JP14060683A JPS6355877B2 JP S6355877 B2 JPS6355877 B2 JP S6355877B2 JP 58140606 A JP58140606 A JP 58140606A JP 14060683 A JP14060683 A JP 14060683A JP S6355877 B2 JPS6355877 B2 JP S6355877B2
Authority
JP
Japan
Prior art keywords
phase reaction
semiconductor
layer
laser
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58140606A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60100489A (ja
Inventor
Tamotsu Iwasaki
Toshiaki Ikoma
Jitoku Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP58140606A priority Critical patent/JPS60100489A/ja
Priority to US06/633,971 priority patent/US4648095A/en
Priority to CA000460154A priority patent/CA1240023A/en
Priority to EP84109187A priority patent/EP0133996B1/en
Priority to DE8484109187T priority patent/DE3480758D1/de
Publication of JPS60100489A publication Critical patent/JPS60100489A/ja
Publication of JPS6355877B2 publication Critical patent/JPS6355877B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2072—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by vacancy induced diffusion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material

Landscapes

  • Semiconductor Lasers (AREA)
JP58140606A 1983-08-02 1983-08-02 半導体レ−ザ Granted JPS60100489A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP58140606A JPS60100489A (ja) 1983-08-02 1983-08-02 半導体レ−ザ
US06/633,971 US4648095A (en) 1983-08-02 1984-07-24 Semiconductor laser
CA000460154A CA1240023A (en) 1983-08-02 1984-08-01 Semiconductor laser
EP84109187A EP0133996B1 (en) 1983-08-02 1984-08-02 Semiconductor laser
DE8484109187T DE3480758D1 (de) 1983-08-02 1984-08-02 Halbleiterlaser.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58140606A JPS60100489A (ja) 1983-08-02 1983-08-02 半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS60100489A JPS60100489A (ja) 1985-06-04
JPS6355877B2 true JPS6355877B2 (enExample) 1988-11-04

Family

ID=15272615

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58140606A Granted JPS60100489A (ja) 1983-08-02 1983-08-02 半導体レ−ザ

Country Status (5)

Country Link
US (1) US4648095A (enExample)
EP (1) EP0133996B1 (enExample)
JP (1) JPS60100489A (enExample)
CA (1) CA1240023A (enExample)
DE (1) DE3480758D1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4804639A (en) * 1986-04-18 1989-02-14 Bell Communications Research, Inc. Method of making a DH laser with strained layers by MBE
JPS6348888A (ja) * 1986-08-19 1988-03-01 Mitsubishi Electric Corp 半導体レ−ザ装置
NL8602653A (nl) * 1986-10-23 1988-05-16 Philips Nv Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.
US4897361A (en) * 1987-12-14 1990-01-30 American Telephone & Telegraph Company, At&T Bell Laboratories Patterning method in the manufacture of miniaturized devices
JP3093774B2 (ja) * 1990-04-02 2000-10-03 住友電気工業株式会社 電極構造
US7141828B2 (en) * 2003-03-19 2006-11-28 Gelcore, Llc Flip-chip light emitting diode with a thermally stable multiple layer reflective p-type contact

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54115088A (en) * 1978-02-28 1979-09-07 Nec Corp Double hetero junction laser element of stripe type
NL7901122A (nl) * 1979-02-13 1980-08-15 Philips Nv Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.
US4309670A (en) * 1979-09-13 1982-01-05 Xerox Corporation Transverse light emitting electroluminescent devices
US4563368A (en) * 1983-02-14 1986-01-07 Xerox Corporation Passivation for surfaces and interfaces of semiconductor laser facets or the like

Also Published As

Publication number Publication date
EP0133996B1 (en) 1989-12-13
JPS60100489A (ja) 1985-06-04
EP0133996A2 (en) 1985-03-13
CA1240023A (en) 1988-08-02
EP0133996A3 (en) 1986-08-13
US4648095A (en) 1987-03-03
DE3480758D1 (de) 1990-01-18

Similar Documents

Publication Publication Date Title
US6430203B1 (en) Semiconductor laser device with non-oxidized facet regions
JPS6355877B2 (enExample)
US4447905A (en) Current confinement in semiconductor light emitting devices
EP0432843B1 (en) Semiconductor diode laser and method of manufacturing such a laser
JPH07312462A (ja) 面発光レーザダイオードの製造方法，及び面発光レーザダイオード
JPH10512720A (ja) レーザ増幅器として使用可能な半導体ダイオードレーザ及びその製造方法
JP3479925B2 (ja) 分布帰還型半導体レーザ及びその製造方法
JP2726601B2 (ja) スーパールミネッセントダイオードおよびその製法
JPH037153B2 (enExample)
KR100239767B1 (ko) 반도체 레이저 다이오드의 제조방법
JPH05145170A (ja) 面発光レーザ
JP2973215B2 (ja) 半導体レーザ装置
JPH0582758B2 (enExample)
JP3205589B2 (ja) 半導体薄膜の成長方法
JP2769408B2 (ja) スーパールミネッセントダイオード
JPH01293686A (ja) 半導体レーザ素子の製造方法
JPH0831652B2 (ja) 半導体レ−ザ
JPH0697494A (ja) スーパールミネッセントダイオードおよびその製法
JP2001257421A (ja) 半導体レーザ素子および製造方法
JPH0766992B2 (ja) ＡｌＧａＩｎＰ系半導体レーザとその製造方法
JPH0677594A (ja) 半導体レーザー
JPH06164058A (ja) 半導体レーザおよびその製法
JPH05235477A (ja) 光半導体素子の製造方法
JPH0537070A (ja) 分布帰還型半導体レーザ素子の製造方法
JPH09139544A (ja) 半導体レーザ装置及びその製造方法