JPS6355780B2 - - Google Patents
Info
- Publication number
- JPS6355780B2 JPS6355780B2 JP14077381A JP14077381A JPS6355780B2 JP S6355780 B2 JPS6355780 B2 JP S6355780B2 JP 14077381 A JP14077381 A JP 14077381A JP 14077381 A JP14077381 A JP 14077381A JP S6355780 B2 JPS6355780 B2 JP S6355780B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- oxidation
- groove
- field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000003647 oxidation Effects 0.000 claims description 62
- 238000007254 oxidation reaction Methods 0.000 claims description 62
- 239000000758 substrate Substances 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 38
- 238000005530 etching Methods 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 11
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000005121 nitriding Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 description 26
- 239000010703 silicon Substances 0.000 description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 25
- 239000000463 material Substances 0.000 description 20
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- 238000000206 photolithography Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000010354 integration Effects 0.000 description 6
- 230000000873 masking effect Effects 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 241000293849 Cordylanthus Species 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001393 microlithography Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14077381A JPS5842251A (ja) | 1981-09-07 | 1981-09-07 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14077381A JPS5842251A (ja) | 1981-09-07 | 1981-09-07 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5842251A JPS5842251A (ja) | 1983-03-11 |
| JPS6355780B2 true JPS6355780B2 (zh) | 1988-11-04 |
Family
ID=15276411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14077381A Granted JPS5842251A (ja) | 1981-09-07 | 1981-09-07 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5842251A (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210090285A (ko) * | 2018-12-13 | 2021-07-19 | 웨이모 엘엘씨 | 자율 주행 차량들에 대한 자동화된 성능 검사들 |
| US11760380B2 (en) | 2019-03-29 | 2023-09-19 | Honda Motor Co., Ltd. | Vehicle control system |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0434136Y2 (zh) * | 1987-07-14 | 1992-08-14 | ||
| US5904539A (en) * | 1996-03-21 | 1999-05-18 | Advanced Micro Devices, Inc. | Semiconductor trench isolation process resulting in a silicon mesa having enhanced mechanical and electrical properties |
| JP2000508474A (ja) * | 1996-04-10 | 2000-07-04 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | 改善された平坦化方法を伴う半導体トレンチアイソレーション |
| US5926713A (en) * | 1996-04-17 | 1999-07-20 | Advanced Micro Devices, Inc. | Method for achieving global planarization by forming minimum mesas in large field areas |
| US5899727A (en) * | 1996-05-02 | 1999-05-04 | Advanced Micro Devices, Inc. | Method of making a semiconductor isolation region bounded by a trench and covered with an oxide to improve planarization |
| US6303413B1 (en) * | 2000-05-03 | 2001-10-16 | Maxim Integrated Products, Inc. | Method of forming a shallow and deep trench isolation (SDTI) suitable for silicon on insulator (SOI) substrates |
| DE10041084A1 (de) * | 2000-08-22 | 2002-03-14 | Infineon Technologies Ag | Verfahren zur Bildung eines dielektrischen Gebiets in einem Halbleitersubstrat |
| KR100672156B1 (ko) * | 2005-05-11 | 2007-01-19 | 주식회사 하이닉스반도체 | 반도체 소자의 소자분리막 및 이의 형성방법 |
-
1981
- 1981-09-07 JP JP14077381A patent/JPS5842251A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210090285A (ko) * | 2018-12-13 | 2021-07-19 | 웨이모 엘엘씨 | 자율 주행 차량들에 대한 자동화된 성능 검사들 |
| US11760380B2 (en) | 2019-03-29 | 2023-09-19 | Honda Motor Co., Ltd. | Vehicle control system |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5842251A (ja) | 1983-03-11 |
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