JP2000508474A - 改善された平坦化方法を伴う半導体トレンチアイソレーション - Google Patents
改善された平坦化方法を伴う半導体トレンチアイソレーションInfo
- Publication number
- JP2000508474A JP2000508474A JP09536181A JP53618197A JP2000508474A JP 2000508474 A JP2000508474 A JP 2000508474A JP 09536181 A JP09536181 A JP 09536181A JP 53618197 A JP53618197 A JP 53618197A JP 2000508474 A JP2000508474 A JP 2000508474A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- silicon
- layer
- isolation
- filled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000034 method Methods 0.000 title claims abstract description 98
- 238000002955 isolation Methods 0.000 title abstract description 80
- 239000004065 semiconductor Substances 0.000 title description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 104
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 104
- 239000010703 silicon Substances 0.000 claims abstract description 104
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 150000004767 nitrides Chemical class 0.000 claims abstract description 21
- 238000005498 polishing Methods 0.000 claims abstract description 18
- 239000000126 substance Substances 0.000 claims abstract description 14
- 230000000873 masking effect Effects 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 16
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 14
- 238000012876 topography Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims 1
- 239000000843 powder Substances 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 22
- 229920005591 polysilicon Polymers 0.000 abstract description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 5
- 238000000059 patterning Methods 0.000 abstract description 5
- 239000000203 mixture Substances 0.000 abstract description 3
- 239000000872 buffer Substances 0.000 abstract description 2
- 230000001627 detrimental effect Effects 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 241000293849 Cordylanthus Species 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 241000894007 species Species 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 108010011935 Poly 18 antigen Proteins 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- UPSOBXZLFLJAKK-UHFFFAOYSA-N ozone;tetraethyl silicate Chemical compound [O-][O+]=O.CCO[Si](OCC)(OCC)OCC UPSOBXZLFLJAKK-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- -1 second oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/05—Etch and refill
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.誘電体材料の平坦化されたトポグラフィを形成するための方法であって シリコン基板から延在する少なくとも3つのシリコン表面を含む集積回路トポ グラフィを提供するステップを含み、前記少なくとも3つのシリコン表面のうち の2つは互いに短い距離だけ間隔がおかれており、前記少なくとも3つのシリコ ン表面のうちの2つは互いに前記短い距離より大きい長い距離だけ間隔がおかれ ており、前記方法はさらに 前記シリコン表面および前記シリコン基板上に第1の酸化物充填層を堆積する ステップと、 前記長い距離の一部分にわたって前記第1の酸化物充填層の上にマスキング層 を付与するステップと、 前記マスキング層の下にある前記第1の酸化物充填層を除いた前記第1の酸化 物充填層を除去するステップと、 前記シリコン表面および前記シリコン基板の上に第2の酸化物充填層を再び堆 積して、前記マスキング層の周縁部の下にある前記第2の酸化物充填層の上面内 に窪みを形成するステップとを含む、方法。 2.前記提供するステップは、実質的に平坦なシリコン表面をエッチングして、 高さが低くされた前記シリコン基板の間に挟まれる高くされた前記少なくとも3 つのシリコン表面を形成するステップを含む、請求項1に記載の方法。 3.前記長い距離は2.0ミクロンより大きく、前記短い距離は1.0ミクロン より小さい、請求項1に記載の方法。 4.前記堆積するステップは、前記シリコン表面および前記シリコン基板を、周 囲のテトラエトキシシランで充填されたLPCVDチャンバの中に挿入して、前 記第1の酸化物充填層を含む一連の堆積材料を形成するステップを含む、請求項 1に記載の方法。 5.前記LPCVDチャンバは800℃より高い温度にまで加熱される、請求項 4に記載の方法。 6.前記付与するステップは、フォトレジスト層を前記長い距離の前記部分上に 直接堆積するステップを含む、請求項1に記載の方法。 7.前記再び堆積するステップは、前記第1の酸化物充填で覆ったシリコン表面 および前記シリコン基板を周囲のテトラエトキシシランで充填されたLPCVD チャンバの中に挿入して、前記第1の酸化物充填層を含む一連の堆積材料を形成 するステップを含む、請求項1に記載の方法。 8.前記窪みは前記第2の酸化物充填層の上面内の窪んだ領域を含み、前記窪ん だ領域は前記第2の酸化物充填層の上面より100Åより小さい高さだけ低い、 請求項1に記載の方法。 9.集積回路を形成する方法であって、 シリコン基板から延在する少なくとも3つのシリコン表面を含む集積回路トポ グラフィを提供するステップを含み、前記少なくとも3つのシリコン表面のうち の2つは互いに短い距離だけ間隔がおかれており、前記少なくとも3つのシリコ ン表面のうちの2つは互いに前記短い距離より大きい長い距離だけ間隔がおかれ ており、前記方法はさらに 前記シリコン表面および前記シリコン基板上に第1の酸化物充填層を堆積する ステップと、 前記長い距離の一部分にわたって前記第1の酸化物充填層の上にマスキング層 を付与するステップと、 前記マスキング層の下にある前記第1の酸化物充填層を除いた前記第1の酸化 物充填層を除去するステップと、 前記シリコン表面および前記シリコン基板の上に第2の酸化物充填層を再び堆 積して、前記マスキング層の周縁部の下にある前記第2の酸化物充填層の上面内 に窪みを形成するステップと、 前記第2の酸化物充填層の上面を、前記窪みより低い、前記少なくとも3つの シリコン表面の高さと実質的に同じである高さにまで化学機械研磨するステップ とを含む、方法。 10.前記化学機械研磨するステップは、研磨材のスラリーが混入した回転パッ ドを前記第2の酸化物充填層の上面に適用するステップを含む、請求項9に記載 の方法。 11.前記少なくとも3つのシリコン表面は各々がさらに、前記少なくとも3つ のシリコン表面上に堆積されるパッド酸化物の層と、前記パッド酸化物の層の上 に堆積される窒化物の層とを含む、請求項9に記載の方法。 12.前記窒化物の層は窒化物の厚みを含む、請求項11に記載の方法。 13.前記化学機械研磨するステップは前記窒化物の厚みのほぼ半分を除去する のに十分な時間だけ継続される、請求項11に記載の方法。 14.前記少なくとも3つのシリコン表面はソースおよびドレインドーパントイ オンを受けるよう適合される、請求項9に記載の方法。 15.前記少なくとも3つのシリコン表面は前記化学機械研磨するステップの後 に熱成長したゲート酸化物を受けるように適合される、請求項9に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US63038896A | 1996-04-10 | 1996-04-10 | |
US08/630,388 | 1996-04-10 | ||
PCT/US1997/002438 WO1997038442A1 (en) | 1996-04-10 | 1997-02-14 | Semiconductor trench isolation with improved planarization methodology |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2000508474A true JP2000508474A (ja) | 2000-07-04 |
JP2000508474A5 JP2000508474A5 (ja) | 2004-11-18 |
Family
ID=24526971
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP09536181A Ceased JP2000508474A (ja) | 1996-04-10 | 1997-02-14 | 改善された平坦化方法を伴う半導体トレンチアイソレーション |
Country Status (3)
Country | Link |
---|---|
US (1) | US5981357A (ja) |
JP (1) | JP2000508474A (ja) |
WO (1) | WO1997038442A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5899727A (en) | 1996-05-02 | 1999-05-04 | Advanced Micro Devices, Inc. | Method of making a semiconductor isolation region bounded by a trench and covered with an oxide to improve planarization |
TW347576B (en) * | 1996-12-18 | 1998-12-11 | Siemens Ag | Method to produce an integrated circuit arrangement |
US6013937A (en) * | 1997-09-26 | 2000-01-11 | Siemens Aktiengesellshaft | Buffer layer for improving control of layer thickness |
US6214696B1 (en) * | 1998-04-22 | 2001-04-10 | Texas Instruments - Acer Incorporated | Method of fabricating deep-shallow trench isolation |
US6238997B1 (en) * | 1999-01-25 | 2001-05-29 | United Microelectronics Corp. | Method of fabricating shallow trench isolation |
FR2791810B1 (fr) * | 1999-03-31 | 2001-06-22 | France Telecom | Procede de fabrication d'une heterostructure planaire |
US6232043B1 (en) * | 1999-05-25 | 2001-05-15 | Taiwan Semiconductor Manufacturing Company | Rule to determine CMP polish time |
US6265292B1 (en) * | 1999-07-12 | 2001-07-24 | Intel Corporation | Method of fabrication of a novel flash integrated circuit |
US6566759B1 (en) * | 1999-08-23 | 2003-05-20 | International Business Machines Corporation | Self-aligned contact areas for sidewall image transfer formed conductors |
US6294423B1 (en) * | 2000-11-21 | 2001-09-25 | Infineon Technologies North America Corp. | Method for forming and filling isolation trenches |
US6613649B2 (en) | 2001-12-05 | 2003-09-02 | Chartered Semiconductor Manufacturing Ltd | Method for buffer STI scheme with a hard mask layer as an oxidation barrier |
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US5308786A (en) * | 1993-09-27 | 1994-05-03 | United Microelectronics Corporation | Trench isolation for both large and small areas by means of silicon nodules after metal etching |
US5371036A (en) * | 1994-05-11 | 1994-12-06 | United Microelectronics Corporation | Locos technology with narrow silicon trench |
US5696020A (en) * | 1994-11-23 | 1997-12-09 | Electronics And Telecommunications Research Institute | Method for fabricating semiconductor device isolation region using a trench mask |
SG45497A1 (en) * | 1995-09-05 | 1998-01-16 | Chartered Semiconductors Manuf | Low profile shallon trench double polysilicon capacitor |
-
1997
- 1997-02-14 WO PCT/US1997/002438 patent/WO1997038442A1/en active Search and Examination
- 1997-02-14 JP JP09536181A patent/JP2000508474A/ja not_active Ceased
- 1997-06-16 US US08/877,000 patent/US5981357A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5981357A (en) | 1999-11-09 |
WO1997038442A1 (en) | 1997-10-16 |
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