JPS6355780B2 - - Google Patents

Info

Publication number
JPS6355780B2
JPS6355780B2 JP56140773A JP14077381A JPS6355780B2 JP S6355780 B2 JPS6355780 B2 JP S6355780B2 JP 56140773 A JP56140773 A JP 56140773A JP 14077381 A JP14077381 A JP 14077381A JP S6355780 B2 JPS6355780 B2 JP S6355780B2
Authority
JP
Japan
Prior art keywords
film
insulating film
oxidation
groove
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56140773A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5842251A (ja
Inventor
Hiroshi Iwai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56140773A priority Critical patent/JPS5842251A/ja
Publication of JPS5842251A publication Critical patent/JPS5842251A/ja
Publication of JPS6355780B2 publication Critical patent/JPS6355780B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0145—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations of trenches having shapes other than rectangular or V-shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0143—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising concurrently refilling multiple trenches having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0148—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising introducing impurities in side walls or bottom walls of trenches, e.g. for forming channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
JP56140773A 1981-09-07 1981-09-07 半導体装置の製造方法 Granted JPS5842251A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56140773A JPS5842251A (ja) 1981-09-07 1981-09-07 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56140773A JPS5842251A (ja) 1981-09-07 1981-09-07 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5842251A JPS5842251A (ja) 1983-03-11
JPS6355780B2 true JPS6355780B2 (enFirst) 1988-11-04

Family

ID=15276411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56140773A Granted JPS5842251A (ja) 1981-09-07 1981-09-07 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5842251A (enFirst)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210090285A (ko) * 2018-12-13 2021-07-19 웨이모 엘엘씨 자율 주행 차량들에 대한 자동화된 성능 검사들
US11760380B2 (en) 2019-03-29 2023-09-19 Honda Motor Co., Ltd. Vehicle control system

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0434136Y2 (enFirst) * 1987-07-14 1992-08-14
US5904539A (en) * 1996-03-21 1999-05-18 Advanced Micro Devices, Inc. Semiconductor trench isolation process resulting in a silicon mesa having enhanced mechanical and electrical properties
JP2000508474A (ja) * 1996-04-10 2000-07-04 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 改善された平坦化方法を伴う半導体トレンチアイソレーション
US5926713A (en) * 1996-04-17 1999-07-20 Advanced Micro Devices, Inc. Method for achieving global planarization by forming minimum mesas in large field areas
US5899727A (en) * 1996-05-02 1999-05-04 Advanced Micro Devices, Inc. Method of making a semiconductor isolation region bounded by a trench and covered with an oxide to improve planarization
US6303413B1 (en) * 2000-05-03 2001-10-16 Maxim Integrated Products, Inc. Method of forming a shallow and deep trench isolation (SDTI) suitable for silicon on insulator (SOI) substrates
DE10041084A1 (de) * 2000-08-22 2002-03-14 Infineon Technologies Ag Verfahren zur Bildung eines dielektrischen Gebiets in einem Halbleitersubstrat
KR100672156B1 (ko) * 2005-05-11 2007-01-19 주식회사 하이닉스반도체 반도체 소자의 소자분리막 및 이의 형성방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210090285A (ko) * 2018-12-13 2021-07-19 웨이모 엘엘씨 자율 주행 차량들에 대한 자동화된 성능 검사들
US11760380B2 (en) 2019-03-29 2023-09-19 Honda Motor Co., Ltd. Vehicle control system

Also Published As

Publication number Publication date
JPS5842251A (ja) 1983-03-11

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