JPS6355191A - 化合物半導体結晶の形成方法 - Google Patents
化合物半導体結晶の形成方法Info
- Publication number
- JPS6355191A JPS6355191A JP19760786A JP19760786A JPS6355191A JP S6355191 A JPS6355191 A JP S6355191A JP 19760786 A JP19760786 A JP 19760786A JP 19760786 A JP19760786 A JP 19760786A JP S6355191 A JPS6355191 A JP S6355191A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- substrate
- growth
- compound semiconductor
- constituent elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 57
- 150000001875 compounds Chemical class 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 32
- 239000000470 constituent Substances 0.000 claims abstract description 23
- 238000001179 sorption measurement Methods 0.000 claims abstract description 23
- 230000012010 growth Effects 0.000 claims description 58
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 13
- 239000010410 layer Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000002052 molecular layer Substances 0.000 description 4
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 3
- 229910000070 arsenic hydride Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 229910021617 Indium monochloride Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19760786A JPS6355191A (ja) | 1986-08-22 | 1986-08-22 | 化合物半導体結晶の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19760786A JPS6355191A (ja) | 1986-08-22 | 1986-08-22 | 化合物半導体結晶の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6355191A true JPS6355191A (ja) | 1988-03-09 |
| JPH0582358B2 JPH0582358B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-11-18 |
Family
ID=16377283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19760786A Granted JPS6355191A (ja) | 1986-08-22 | 1986-08-22 | 化合物半導体結晶の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6355191A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5102061A (en) * | 1990-08-08 | 1992-04-07 | Yazaki Corporation | Brushless electric signal transmitting rotary device |
| JPH04233182A (ja) * | 1990-09-24 | 1992-08-21 | Methode Electron Inc | クロックスプリングハウジング及び組立体 |
-
1986
- 1986-08-22 JP JP19760786A patent/JPS6355191A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5102061A (en) * | 1990-08-08 | 1992-04-07 | Yazaki Corporation | Brushless electric signal transmitting rotary device |
| JPH04233182A (ja) * | 1990-09-24 | 1992-08-21 | Methode Electron Inc | クロックスプリングハウジング及び組立体 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0582358B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-11-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5294286A (en) | Process for forming a thin film of silicon | |
| JP4158139B2 (ja) | 薄膜の製造方法およびその装置 | |
| EP1432844A1 (en) | Apparatus for inverted cvd | |
| JP2505777B2 (ja) | 半導体物質のエピタキシャル層堆積法 | |
| JPH01313927A (ja) | 化合物半導体結晶成長方法 | |
| JPH0620046B2 (ja) | ▲ｉｉｉ▼−▲ｖ▼族化合物半導体の原子層エピタキシヤル成長方法 | |
| JPS63222421A (ja) | ▲ｉｉｉ▼−▲ｖ▼族化合物半導体の原子層エピタキシヤル成長方法 | |
| JPH08245291A (ja) | Ｉｉｉ−ｖ族化合物半導体結晶の成長方法 | |
| JPH03185716A (ja) | 化合物半導体結晶の成長方法 | |
| JPH01290222A (ja) | 半導体気相成長方法 | |
| JPS63227007A (ja) | 気相成長方法 | |
| JPH04162418A (ja) | 化学気相成長法 | |
| JPS6355191A (ja) | 化合物半導体結晶の形成方法 | |
| JPH03263818A (ja) | 有機金属気相成長装置 | |
| JP2736655B2 (ja) | 化合物半導体結晶成長方法 | |
| JPH02296799A (ja) | 炭化珪素の成長方法 | |
| JP2791444B2 (ja) | 気相エピタキシャル成長方法 | |
| JPH04338636A (ja) | 半導体気相成長装置 | |
| JPH0648899A (ja) | 炭化ケイ素単結晶の製造方法 | |
| JPH0391922A (ja) | 化合物半導体の縦型超格子の形成方法 | |
| JPH07120625B2 (ja) | 化合物半導体単結晶薄膜の形成方法 | |
| JP2847198B2 (ja) | 化合物半導体の気相成長方法 | |
| JPS61260622A (ja) | ＧａＡｓ単結晶薄膜の成長法 | |
| JP3252644B2 (ja) | 気相成長方法及びその装置 | |
| JPS63292620A (ja) | 単原子層薄膜堆積装置 |