JPS6354774A - 化合物半導体装置の製造方法 - Google Patents

化合物半導体装置の製造方法

Info

Publication number
JPS6354774A
JPS6354774A JP19735886A JP19735886A JPS6354774A JP S6354774 A JPS6354774 A JP S6354774A JP 19735886 A JP19735886 A JP 19735886A JP 19735886 A JP19735886 A JP 19735886A JP S6354774 A JPS6354774 A JP S6354774A
Authority
JP
Japan
Prior art keywords
film
melting point
high melting
point metal
annealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19735886A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0260215B2 (cs
Inventor
Takeshi Nogami
毅 野上
Hiroshi Iwasaki
博 岩崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP19735886A priority Critical patent/JPS6354774A/ja
Publication of JPS6354774A publication Critical patent/JPS6354774A/ja
Publication of JPH0260215B2 publication Critical patent/JPH0260215B2/ja
Priority to US07/688,711 priority patent/US5187111A/en
Priority to US07/941,151 priority patent/US5405792A/en
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP19735886A 1985-09-27 1986-08-25 化合物半導体装置の製造方法 Granted JPS6354774A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP19735886A JPS6354774A (ja) 1986-08-25 1986-08-25 化合物半導体装置の製造方法
US07/688,711 US5187111A (en) 1985-09-27 1991-04-23 Method of manufacturing Schottky barrier gate FET
US07/941,151 US5405792A (en) 1985-09-27 1992-09-04 Method of manufacturing schottky barrier gate type fet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19735886A JPS6354774A (ja) 1986-08-25 1986-08-25 化合物半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6354774A true JPS6354774A (ja) 1988-03-09
JPH0260215B2 JPH0260215B2 (cs) 1990-12-14

Family

ID=16373154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19735886A Granted JPS6354774A (ja) 1985-09-27 1986-08-25 化合物半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6354774A (cs)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63142681A (ja) * 1986-12-04 1988-06-15 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタの製造方法
US6639316B1 (en) 1999-02-18 2003-10-28 The Furukawa Electric Co., Ltd. Electrode having substrate and surface electrode components for a semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63142681A (ja) * 1986-12-04 1988-06-15 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタの製造方法
US6639316B1 (en) 1999-02-18 2003-10-28 The Furukawa Electric Co., Ltd. Electrode having substrate and surface electrode components for a semiconductor device

Also Published As

Publication number Publication date
JPH0260215B2 (cs) 1990-12-14

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees