JPS635468B2 - - Google Patents

Info

Publication number
JPS635468B2
JPS635468B2 JP61015096A JP1509686A JPS635468B2 JP S635468 B2 JPS635468 B2 JP S635468B2 JP 61015096 A JP61015096 A JP 61015096A JP 1509686 A JP1509686 A JP 1509686A JP S635468 B2 JPS635468 B2 JP S635468B2
Authority
JP
Japan
Prior art keywords
thin film
carbon thin
hard carbon
film
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP61015096A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62174378A (ja
Inventor
Shinzo Morita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KAGAKU GIJUTSUCHO CHOKAN KANBO
Original Assignee
KAGAKU GIJUTSUCHO CHOKAN KANBO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KAGAKU GIJUTSUCHO CHOKAN KANBO filed Critical KAGAKU GIJUTSUCHO CHOKAN KANBO
Priority to JP61015096A priority Critical patent/JPS62174378A/ja
Publication of JPS62174378A publication Critical patent/JPS62174378A/ja
Publication of JPS635468B2 publication Critical patent/JPS635468B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
JP61015096A 1986-01-27 1986-01-27 硬質炭素薄膜の形成方法 Granted JPS62174378A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61015096A JPS62174378A (ja) 1986-01-27 1986-01-27 硬質炭素薄膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61015096A JPS62174378A (ja) 1986-01-27 1986-01-27 硬質炭素薄膜の形成方法

Publications (2)

Publication Number Publication Date
JPS62174378A JPS62174378A (ja) 1987-07-31
JPS635468B2 true JPS635468B2 (enrdf_load_stackoverflow) 1988-02-03

Family

ID=11879307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61015096A Granted JPS62174378A (ja) 1986-01-27 1986-01-27 硬質炭素薄膜の形成方法

Country Status (1)

Country Link
JP (1) JPS62174378A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0259462U (enrdf_load_stackoverflow) * 1988-10-21 1990-05-01
JPH07506899A (ja) * 1992-02-28 1995-07-27 ザ　ダウ　ケミカル　カンパニー 膜式流体分離装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2852380B2 (ja) * 1988-03-26 1999-02-03 株式会社半導体エネルギー研究所 炭素または炭素を主成分とする被膜を形成する方法
AU1055801A (en) * 1999-11-04 2001-05-14 Mitsubishi Shoji Plastics Corporation Nitrogen-free dlc film coated plastic container, and method and apparatus for manufacturing the same
JP2006161075A (ja) * 2004-12-03 2006-06-22 Shinko Seiki Co Ltd 硬質炭素膜およびその形成方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60145994A (ja) * 1984-01-06 1985-08-01 テクニオン・リサ−チ・アンド・デベロツプメント・フアウンデ−シヨン・リミテツド 基体にダイヤモンド状炭素被膜を形成するための方法
JPS61183198A (ja) * 1984-12-29 1986-08-15 Kyocera Corp ダイヤモンド膜の製法
JPS61222915A (ja) * 1985-03-29 1986-10-03 Asahi Chem Ind Co Ltd ダイヤモンドの気相合成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0259462U (enrdf_load_stackoverflow) * 1988-10-21 1990-05-01
JPH07506899A (ja) * 1992-02-28 1995-07-27 ザ　ダウ　ケミカル　カンパニー 膜式流体分離装置

Also Published As

Publication number Publication date
JPS62174378A (ja) 1987-07-31

Similar Documents

Publication Publication Date Title
CN1072735C (zh) 沉积铝薄膜的方法
JPS6171626A (ja) グロー放電による硬質の炭素質膜の堆積方法及び該方法により堆積された膜を有する半導体デバイス
US6132816A (en) Method for producing homoepitaxial diamond thin films
JPS63307196A (ja) ダイヤモンド多層薄膜及びその製造方法
JPS62103367A (ja) 炭素膜の合成方法
David et al. Plasma deposition and etching of diamond‐like carbon films
JPS635468B2 (enrdf_load_stackoverflow)
JP3587622B2 (ja) エッチングガス
WO1989011556A1 (en) Process for vapor-phase synthesis of diamond
JPS62180073A (ja) 非晶質炭素膜およびその製造方法
Ianno et al. Plasma-enhanced chemical vapor deposition of molybdenum
JPS62174379A (ja) 硬質炭素薄膜の形成方法
Gilbert et al. Novel in situ production of smooth diamond films
JP2799849B2 (ja) 化学蒸着法によるダイヤモンドの合成方法
JP2617374B2 (ja) ダイヤモンド薄膜とその作製方法
JPS59182521A (ja) 水素化シリコン薄膜の形成方法
JPS6240375A (ja) 硬質カ−ボン膜
Ang et al. Effects of nitrogen trifluoride on the growth and properties of plasma-enhanced chemical-vapor-deposited diamond-like carbon films
Chen et al. Photoluminescence and Raman studies of hydrogenated amorphous carbon films deposited by the rf plasma-enhanced CVD method
JP3471843B2 (ja) 炭素薄膜形成装置
JPH03218682A (ja) 水素化結晶シリコン薄膜及び太陽電池
JPH01238024A (ja) 半導体装置の酸化膜の製造法
Kashem et al. Formation of carbon-gold-sulfide conductive granular molecules by a cooperation process of plasma CVD and sputtering
Xu et al. The effects of applied bias voltage on structure and hydrogen content of aC: H films
JPH0271518A (ja) 電子素子の製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term