JPS6354230B2 - - Google Patents

Info

Publication number
JPS6354230B2
JPS6354230B2 JP56077655A JP7765581A JPS6354230B2 JP S6354230 B2 JPS6354230 B2 JP S6354230B2 JP 56077655 A JP56077655 A JP 56077655A JP 7765581 A JP7765581 A JP 7765581A JP S6354230 B2 JPS6354230 B2 JP S6354230B2
Authority
JP
Japan
Prior art keywords
layer
electron
semiconductor
channel layer
control electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56077655A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57193067A (en
Inventor
Sukehisa Hyamizu
Takashi Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56077655A priority Critical patent/JPS57193067A/ja
Publication of JPS57193067A publication Critical patent/JPS57193067A/ja
Publication of JPS6354230B2 publication Critical patent/JPS6354230B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56077655A 1981-05-22 1981-05-22 Semiconductor device Granted JPS57193067A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56077655A JPS57193067A (en) 1981-05-22 1981-05-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56077655A JPS57193067A (en) 1981-05-22 1981-05-22 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57193067A JPS57193067A (en) 1982-11-27
JPS6354230B2 true JPS6354230B2 (OSRAM) 1988-10-27

Family

ID=13639895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56077655A Granted JPS57193067A (en) 1981-05-22 1981-05-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57193067A (OSRAM)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60206074A (ja) * 1984-03-30 1985-10-17 Fujitsu Ltd 電界効果型半導体装置
FR2566185B1 (fr) * 1984-06-15 1990-03-30 American Telephone & Telegraph Structure logique complementaire
JPH0793428B2 (ja) * 1984-10-03 1995-10-09 株式会社日立製作所 半導体装置及びその製造方法
JPH0815205B2 (ja) * 1985-01-23 1996-02-14 株式会社日立製作所 半導体装置
JPH0793322B2 (ja) * 1985-09-27 1995-10-09 株式会社日立製作所 半導体装置

Also Published As

Publication number Publication date
JPS57193067A (en) 1982-11-27

Similar Documents

Publication Publication Date Title
US12034051B2 (en) Nitride-based semiconductor device and method of manufacturing the same
US4663643A (en) Semiconductor device and process for producing the same
JP2581452B2 (ja) 電界効果トランジスタ
JP2000277724A (ja) 電界効果トランジスタとそれを備えた半導体装置及びその製造方法
US5350709A (en) Method of doping a group III-V compound semiconductor
JP2019062115A (ja) 電界効果トランジスタの製造方法及び電界効果トランジスタ
CN112582470A (zh) 一种常闭型高电子迁移率晶体管及制造方法
US9252157B2 (en) Method to form group III-V and Si/Ge FINFET on insulator and integrated circuit fabricated using the method
JPS6354230B2 (OSRAM)
US20080176391A1 (en) Method for manufacturing semiconductor device
JP2005203544A (ja) 窒化物半導体装置とその製造方法
JPH08306909A (ja) ＩｎＧａＡｓ電界効果型トランジスタ
JP2013222939A (ja) 窒化物半導体を用いたトランジスタおよびその製造方法
JPS6354228B2 (OSRAM)
JP2685026B2 (ja) 電界効果トランジスタおよび製造方法
JPS6353711B2 (OSRAM)
JPH05335346A (ja) 半導体装置及びその製造方法
JP2015099850A (ja) 窒化物半導体を用いたトランジスタおよびその製造方法
JP2504785B2 (ja) 半導体集積回路およびその製造方法
JPH05121447A (ja) 砒化ガリウム電界効果トランジスタ
JPH05335341A (ja) Ｉｉｉ−ｖ族化合物半導体装置の製造方法
JPS6353709B2 (OSRAM)
KR890003416B1 (ko) 반도체 장치 및 그의 제조방법
JPH0855861A (ja) 電界効果トランジスタ、及びその製造方法
JPS6089979A (ja) 半導体装置