JPS6351649A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS6351649A
JPS6351649A JP61196379A JP19637986A JPS6351649A JP S6351649 A JPS6351649 A JP S6351649A JP 61196379 A JP61196379 A JP 61196379A JP 19637986 A JP19637986 A JP 19637986A JP S6351649 A JPS6351649 A JP S6351649A
Authority
JP
Japan
Prior art keywords
alloy
bonding
electrode pad
surface layer
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61196379A
Other languages
English (en)
Inventor
Shoji Shiga
志賀　章二
Toru Tanigawa
徹 谷川
Masaaki Kurihara
正明 栗原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP61196379A priority Critical patent/JPS6351649A/ja
Publication of JPS6351649A publication Critical patent/JPS6351649A/ja
Pending legal-status Critical Current

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Classifications

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    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
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    • H01L2224/48817—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は半導体装置に関し、特に信頼性と経済性を共に
両立できるボンディング配線全可能とした半導体装置を
提供するものである。
（従来の技術） １Ｃ、トランジスターなどの半導体装置では第２図に示
すように８１などの素子（１）をマウントしてから、素
子上の電極パッド（３）とリードフレーム（４）などの
基板上の外部端子とｆＡｕ、　Ａｎなどの細線からなる
ボンディングワイヤー（５）でボンディングして外部結
線して完成される。なお（２）は基板またはリードフレ
ームのタブである。電極パッド（５）は素子（１）回路
の端子に相当し、通常ＡＬ　＋ＡＮ　−Ｃｕ　、　ＡＰ
、−３ｉ、　ｆｉＪｌ　−３ｉ−Ｃｕなどの成合金から
なる薄膜で形成され、パッシベーション膜（６）下に保
護された素子の回路配線と接続されている。外部端子と
接続するボンディングワイヤーｕｋｕ、　Ｍ、線が用い
られるがＭ線は腐食され易いので水分の浸入の不可避な
エポキシモールド（７）などでシールする場合はＡｕｇ
が使用されている。このＡｕ線は高純度でかつ電研パッ
ドのＭと固相拡散し易いので高速度、低荷重で熱圧着す
る超音波併用熱圧着法によりボンディングされる。しか
しＡｕは高価であるばかりでなく、ＭとＡｕとの接合部
が経時的に反応し、いわゆるパープルフレーグ現象によ
シ劣化し、電気抵抗の増加から断線に至るものである。
（発明が解決しようとする問題点） 上記のＡｕ線の代りに安価で強度、導電性に優れたＣｕ
またはＣｕ合金全利用する試みがあるが、Ａｕ線の場合
よりも大きな超音波パワーとボンディング荷重を要し、
かつポンディング時間全長くすることが必要である。こ
のため素子に機械的ストレス、巾割れ？起し易い。特に
高集積度のＩＣでこの傾向が甚しい。
このためＣｕ線の純度やボンディングの温度を高めるこ
とが採用されたが、その効果にも限界があり、　Ｃｕ線
を用いてＡｕ線線機様高能率にしかも信頼性良くボンド
できることが強く望まれていた。
（問題点を解決するための手段） ゛　本発明は上記の問題点全解決するためになされたも
ので電極パッドの全部または一部をＺｎまたはＺｎ合金
或はＩｎ合金で構成したことを特徴とする半導体装置で
ある。そして電極パッドにＣｕまたばＣｕ合金ワイヤー
ｔボンディングして外部端子と接続する半導体装置であ
る。
しかしてこの電極パッドはＺｎのほかＺｎ　−Ｃｕ％Ｚ
ｎ−８ｎＳＺｎ−ｕ、Ｚｎ−Ｇａ５　Ｚｎ−釦、などの
Ｚｎ合金またはＥｎ　−Ａｇ　、　Ｉｎ　−Ｓｎなどの
Ｉｎｎ合金側使用るものでおる。そしてＺｎにＣｕＳＳ
ｎ、成、■、Ｉｎなどを添加するのは機械的強度、耐食
性、蒸気圧等全調整するためであり、その量は重量％で
５０％以下特に望ましくは１０％以下である。また工ｎ
　ＫＡｇ、　Ｓｎなどを添加するのは機械的強度、融点
、耐食性などを調整するためであり、その量は重量％で
１％〜５０％である。実用上これより低いと融点などが
不充分であり、またこれより高いと硬度などが不充分で
ある。また電極バンドに上記の金属また合金を形成する
方法は通常の蒸着、イオンブレーティング、メッキ、イ
オン注入などにより形成するものであり、その厚さは２
μｍ以下で００１〜２μｍが好ましい。
すなわち本発明の態様は例えば第１図（ａ）に示すよう
に素子（１）の上部のアルミニウム膜（８）の表面にＺ
ｎの素層（９）全形成したものである。また第１図（ｂ
）はアルミニウム膜（８）の上部にＴ１、Ｏｒ％Ｐｄな
どの金属をバリヤーへ１として介在させ、この表面にＺ
ｎ合金の表層（９）全形成したものである。さらに別の
例として第１図（ｃ）に示すように素子（１）の表面に
直接Ｚｎ合金全形成したものである。なお第１図におい
て（６）は素子を保護するためのバンシベーション膜で
ある。
しかして上記のＺへＺｎ合金またはＩｎ合金からなる表
層（９）にＣｕまたは０１１合金からなるボンディング
ワイヤー（５）ヲポンデイングして本発明の半導体装置
とするものである。
（作　用） 本発明において電極パッドの表層に形成するＺｎまたは
ＩｎなどはボンディングワイヤーのＣｕと拡散反応固溶
し易い元素であり、Ｃｕ線とのボンディングを著しく促
進する。このためボンディング荷重や超音波パワーを低
減でき、かつ低温で高速度にボンディングでき、よって
素子に対して機械的なダメージを低減できる。さらに前
記のパープルフレーグ現象金起し難く、したがって品質
、信頼性に優れた半導体装置が得られる。またＴ１、Ｃ
ｒ、Ｐｄなどのバリヤー金介在させたものは機械的強度
を向上する作用全なすものでおる。
（実施例） 次１（本発明の一実施例について説明す６つ第１図（２
Ｌ）に示すように５１素子（１）の上部にＡ店−１％Ｃ
ｕｉ形成した電極パッド（３）のパッド部全残してイ ５ｉｎｓ　Ｎ４、Ｓ１０！リン、ケイ酸質ガラス、ポリ
クミドなどのバックベーンヨン膜（６）全形成した。次
にレジスト法により、Ｚｎｉα９μｍおよび０５μｍ、
Ｚｎ　−５Ｓｎ合金をα５μｍ、Ｚｎ−ＬＣｕ合金全α
６μｍの厚さに上記の電極パッドの表面に蒸着した。
次いで５μｍ厚さにＡｇメッキしたリードフレームにＡ
ｇマウントしてからワイヤーボンディングのＣｕ線（９
’３９９９％Ｇｕに１５ｐｐｍのＭｇｋ添加した合金で
２５μｍφ、線の伸び値は１２％）ｉ用いて２９０℃で
第１表の条件により超音波併用熱圧着法によりボンディ
ングした。
第１表 上記の試料についてボンド部の接合収率、ボンドンアー
強度、および８１チツプの割れの有無音調らべた結果全
第２表に、また良好な接合のものについて１８０℃で５
００ｈｒエージングしてサンドのシェアー強度を測定し
た結果を第５表に示す。
なお比較のため従来のＡｌ１−１％Ｃｕ電極パッドに２
５μｍφのＡＵ　＋ＩＷ　ｅポンディングした結果を表
に併記した。
第２表 第５表 表から明らかなように本発明のものはいずれもＡｕ線を
用いた従来例と同様に素子に全くダメージを与えること
なく充分な強度でポンディングできる。しかもボンディ
ング強度においては本発明のものがＡｕ線を用いたもの
より優れ特に加熱エージングによる劣化が著しく少ない
ことが判る。
（効　果） 本発明によればボンディングワイヤーに安価なＣｕ線全
全使用てＡｕと同様の高能率に、かつ信頼性良くポンデ
ィングできる半導体装置が得られるもので、その工業的
な価値は極めて大きいものである。
【図面の簡単な説明】
第１図（２Ｌ）、（ｂ）、（Ｃ）は本発明の一実施例を
説明する拡大断面図、第２図は半導体装置の説明図で（
乙）は側面図（ｂ）は平面図である。 （１）・・・素子、（２）・・・リードフレームのタブ
、（５）・・・電極ハツト、０）・・・リードフレーム
、（５）・・・ボンディングワイヤー、（６）・・・パ
ッシベーションＩＪ、（７）・・・エポキシモールド、
（８）・・・アルミニウムｉ、　（９）・・・Ｚｎ表層
、αＱ・・・バリヤー

Claims (2)

    【特許請求の範囲】
  1. （１）電極パッドの全部または一部をＺｎ、Ｚｎ合金、
    或いはＩｎ合金で構成したことを特徴とする半導体装置
    。
  2. （２）電極パッドにＣｕまたはＣｕ合金ワイヤーをボン
    ディングして外部端子と接続することを特徴とする特許
    請求の範囲第１項記載の半導体装置。
JP61196379A 1986-08-21 1986-08-21 半導体装置 Pending JPS6351649A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61196379A JPS6351649A (ja) 1986-08-21 1986-08-21 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61196379A JPS6351649A (ja) 1986-08-21 1986-08-21 半導体装置

Publications (1)

Publication Number Publication Date
JPS6351649A true JPS6351649A (ja) 1988-03-04

Family

ID=16356890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61196379A Pending JPS6351649A (ja) 1986-08-21 1986-08-21 半導体装置

Country Status (1)

Country Link
JP (1) JPS6351649A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5965943A (en) * 1997-10-01 1999-10-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with bonding pad electrode
WO2010147187A1 (ja) * 2009-06-18 2010-12-23 ローム株式会社 半導体装置
JP2018067680A (ja) * 2016-10-21 2018-04-26 国立研究開発法人産業技術総合研究所 半導体装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5965943A (en) * 1997-10-01 1999-10-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with bonding pad electrode
WO2010147187A1 (ja) * 2009-06-18 2010-12-23 ローム株式会社 半導体装置
CN102484080A (zh) * 2009-06-18 2012-05-30 罗姆股份有限公司 半导体装置
JPWO2010147187A1 (ja) * 2009-06-18 2012-12-06 ローム株式会社 半導体装置
TWI556392B (zh) * 2009-06-18 2016-11-01 羅姆股份有限公司 半導體裝置
US9780069B2 (en) 2009-06-18 2017-10-03 Rohm Co., Ltd. Semiconductor device
US10163850B2 (en) 2009-06-18 2018-12-25 Rohm Co., Ltd. Semiconductor device
JP2018067680A (ja) * 2016-10-21 2018-04-26 国立研究開発法人産業技術総合研究所 半導体装置

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