JPS6351241B2 - - Google Patents
Info
- Publication number
- JPS6351241B2 JPS6351241B2 JP53144368A JP14436878A JPS6351241B2 JP S6351241 B2 JPS6351241 B2 JP S6351241B2 JP 53144368 A JP53144368 A JP 53144368A JP 14436878 A JP14436878 A JP 14436878A JP S6351241 B2 JPS6351241 B2 JP S6351241B2
- Authority
- JP
- Japan
- Prior art keywords
- edge
- mask
- alignment
- objects
- diffraction pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000006073 displacement reaction Methods 0.000 claims description 17
- 230000001427 coherent effect Effects 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 4
- 238000003384 imaging method Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005286 illumination Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- UIZLQMLDSWKZGC-UHFFFAOYSA-N cadmium helium Chemical compound [He].[Cd] UIZLQMLDSWKZGC-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- CPBQJMYROZQQJC-UHFFFAOYSA-N helium neon Chemical compound [He].[Ne] CPBQJMYROZQQJC-UHFFFAOYSA-N 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7049—Technique, e.g. interferometric
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/865,807 US4172664A (en) | 1977-12-30 | 1977-12-30 | High precision pattern registration and overlay measurement system and process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5495267A JPS5495267A (en) | 1979-07-27 |
| JPS6351241B2 true JPS6351241B2 (cg-RX-API-DMAC7.html) | 1988-10-13 |
Family
ID=25346276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14436878A Granted JPS5495267A (en) | 1977-12-30 | 1978-11-24 | System for measuring degree of horizontality between two edges |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4172664A (cg-RX-API-DMAC7.html) |
| EP (1) | EP0002668B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JPS5495267A (cg-RX-API-DMAC7.html) |
| CA (1) | CA1104338A (cg-RX-API-DMAC7.html) |
| DE (1) | DE2861769D1 (cg-RX-API-DMAC7.html) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2472209A1 (fr) * | 1979-12-18 | 1981-06-26 | Thomson Csf | Systeme optique d'alignement automatique de deux motifs comportant des reperes s'alignement du type reseaux, notamment en photo-repetition directe sur silicium |
| DE3071858D1 (en) * | 1980-07-31 | 1987-01-22 | Ibm | Method and device for optical distance measurement |
| JPS58193547A (ja) * | 1982-05-07 | 1983-11-11 | Hitachi Ltd | 縮小投影露光装置 |
| JPS5998525A (ja) * | 1982-11-26 | 1984-06-06 | Canon Inc | 分割焼付け装置のアライメント方法 |
| JPH0619280B2 (ja) * | 1983-09-24 | 1994-03-16 | 名古屋大学長 | 光学式自動位置決め装置 |
| DE3336901A1 (de) * | 1983-10-11 | 1985-04-18 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Maskenmarkierung und substratmarkierung fuer ein verfahren zum justieren einer eine maskenmarkierung enthaltenden photomaske auf einer substratmarkierung |
| US4679942A (en) * | 1984-02-24 | 1987-07-14 | Nippon Kogaku K. K. | Method of aligning a semiconductor substrate and a photomask |
| US4703434A (en) * | 1984-04-24 | 1987-10-27 | The Perkin-Elmer Corporation | Apparatus for measuring overlay error |
| US7115858B1 (en) | 2000-09-25 | 2006-10-03 | Nanometrics Incorporated | Apparatus and method for the measurement of diffracting structures |
| WO2002065545A2 (en) * | 2001-02-12 | 2002-08-22 | Sensys Instruments Corporation | Overlay alignment metrology using diffraction gratings |
| US6898537B1 (en) | 2001-04-27 | 2005-05-24 | Nanometrics Incorporated | Measurement of diffracting structures using one-half of the non-zero diffracted orders |
| US6713753B1 (en) | 2001-07-03 | 2004-03-30 | Nanometrics Incorporated | Combination of normal and oblique incidence polarimetry for the characterization of gratings |
| US7061615B1 (en) | 2001-09-20 | 2006-06-13 | Nanometrics Incorporated | Spectroscopically measured overlay target |
| KR100385066B1 (ko) * | 2001-10-16 | 2003-05-23 | 삼성전자주식회사 | 레이저 스캐닝 유니트 |
| US6982793B1 (en) | 2002-04-04 | 2006-01-03 | Nanometrics Incorporated | Method and apparatus for using an alignment target with designed in offset |
| US6949462B1 (en) | 2002-04-04 | 2005-09-27 | Nanometrics Incorporated | Measuring an alignment target with multiple polarization states |
| US6992764B1 (en) | 2002-09-30 | 2006-01-31 | Nanometrics Incorporated | Measuring an alignment target with a single polarization state |
| US7582538B2 (en) * | 2005-04-06 | 2009-09-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of overlay measurement for alignment of patterns in semiconductor manufacturing |
| US7432605B2 (en) * | 2006-09-21 | 2008-10-07 | Macronix International Co., Ltd. | Overlay mark, method for forming the same and application thereof |
| US7990528B2 (en) * | 2009-09-29 | 2011-08-02 | Xerox Corporation | High resolution linear image sensing using multi-row low resolution image sensor |
| PL224191B1 (pl) | 2012-05-25 | 2016-11-30 | Polska Spółka Inżynierska Digilab Spółka Z Ograniczoną | Sposób wyznaczania wartości wymiaru liniowego obiektu oraz optyczne urządzenie do wyznaczania wymiaru liniowego obiektu |
| US10822890B2 (en) | 2018-06-15 | 2020-11-03 | Rus-Tec Engineering, Ltd. | Pipe handling apparatus |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1231431A (cg-RX-API-DMAC7.html) * | 1967-06-24 | 1971-05-12 | ||
| US3507597A (en) * | 1967-09-26 | 1970-04-21 | Bausch & Lomb | Lens axial alignment method and apparatus |
| US3797939A (en) * | 1968-08-09 | 1974-03-19 | T Pryor | Diffractographic measurement of profile |
| JPS5117297B1 (cg-RX-API-DMAC7.html) * | 1971-03-11 | 1976-06-01 | ||
| US3796497A (en) * | 1971-12-01 | 1974-03-12 | Ibm | Optical alignment method and apparatus |
| US3883249A (en) * | 1972-05-15 | 1975-05-13 | Timothy R Pryor | Z-factor and other diffractographic displacement and profile sensors |
| US3957376A (en) * | 1974-01-25 | 1976-05-18 | International Business Machines Corporation | Measuring method and system using a diffraction pattern |
| US4037969A (en) * | 1976-04-02 | 1977-07-26 | Bell Telephone Laboratories, Incorporated | Zone plate alignment marks |
| NL7606548A (nl) * | 1976-06-17 | 1977-12-20 | Philips Nv | Werkwijze en inrichting voor het uitrichten van een i.c.-patroon ten opzichte van een halfgelei- dend substraat. |
-
1977
- 1977-12-30 US US05/865,807 patent/US4172664A/en not_active Expired - Lifetime
-
1978
- 1978-09-29 CA CA312,413A patent/CA1104338A/en not_active Expired
- 1978-11-24 JP JP14436878A patent/JPS5495267A/ja active Granted
- 1978-11-27 DE DE7878101459T patent/DE2861769D1/de not_active Expired
- 1978-11-27 EP EP78101459A patent/EP0002668B1/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| EP0002668A2 (de) | 1979-07-11 |
| DE2861769D1 (en) | 1982-06-09 |
| US4172664A (en) | 1979-10-30 |
| EP0002668A3 (en) | 1979-07-25 |
| EP0002668B1 (de) | 1982-04-28 |
| JPS5495267A (en) | 1979-07-27 |
| CA1104338A (en) | 1981-07-07 |
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