JPS6350870B2 - - Google Patents

Info

Publication number
JPS6350870B2
JPS6350870B2 JP54107837A JP10783779A JPS6350870B2 JP S6350870 B2 JPS6350870 B2 JP S6350870B2 JP 54107837 A JP54107837 A JP 54107837A JP 10783779 A JP10783779 A JP 10783779A JP S6350870 B2 JPS6350870 B2 JP S6350870B2
Authority
JP
Japan
Prior art keywords
region
buried layer
conductivity type
type
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54107837A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5632763A (en
Inventor
Kimimaro Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP10783779A priority Critical patent/JPS5632763A/ja
Publication of JPS5632763A publication Critical patent/JPS5632763A/ja
Publication of JPS6350870B2 publication Critical patent/JPS6350870B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP10783779A 1979-08-24 1979-08-24 Semiconductor device Granted JPS5632763A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10783779A JPS5632763A (en) 1979-08-24 1979-08-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10783779A JPS5632763A (en) 1979-08-24 1979-08-24 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5632763A JPS5632763A (en) 1981-04-02
JPS6350870B2 true JPS6350870B2 (OSRAM) 1988-10-12

Family

ID=14469293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10783779A Granted JPS5632763A (en) 1979-08-24 1979-08-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5632763A (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4689651A (en) * 1985-07-29 1987-08-25 Motorola, Inc. Low voltage clamp
EP2180517A1 (en) * 2008-10-24 2010-04-28 Epcos Ag Pnp bipolar transistor with lateral collector and method of production

Also Published As

Publication number Publication date
JPS5632763A (en) 1981-04-02

Similar Documents

Publication Publication Date Title
KR100208632B1 (ko) 반도체 집적 회로 및 그 제조 방법
US3590345A (en) Double wall pn junction isolation for monolithic integrated circuit components
US4829344A (en) Electronic semiconductor device for protecting integrated circuits against electrostatic discharges
JP2700180B2 (ja) ｐｎｐ型の縦型孤立コレクタトランジスタ
JPH02156684A (ja) 複合型ダイオード装置
JPH0216017B2 (OSRAM)
JPH06104459A (ja) 半導体装置
JPS6350870B2 (OSRAM)
JPS6323335A (ja) 半導体装置及びその製造方法
JPS6239547B2 (OSRAM)
JPH11121768A (ja) 半導体集積回路
JPS6223098Y2 (OSRAM)
CA1097408A (en) Inverter in an integrated injection logic structure
JP3149913B2 (ja) トランジスタの製造方法
JPH0474478A (ja) ダイオード
JPS6089960A (ja) 半導体集積回路装置
JPS6022504B2 (ja) 半導体装置の製造方法
JPS6364058B2 (OSRAM)
JPS634715B2 (OSRAM)
JPH09116021A (ja) 半導体集積回路とその製造方法
JPH0110938Y2 (OSRAM)
JPS58210659A (ja) 半導体装置およびその製造方法
JPH0322693B2 (OSRAM)
JPS5916414B2 (ja) 半導体装置
JPS59168663A (ja) 半導体集積回路