JPS6349390B2 - - Google Patents
Info
- Publication number
- JPS6349390B2 JPS6349390B2 JP54143475A JP14347579A JPS6349390B2 JP S6349390 B2 JPS6349390 B2 JP S6349390B2 JP 54143475 A JP54143475 A JP 54143475A JP 14347579 A JP14347579 A JP 14347579A JP S6349390 B2 JPS6349390 B2 JP S6349390B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- capacitor
- memory device
- semiconductor memory
- diffusion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000003860 storage Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002285 radioactive effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14347579A JPS5667958A (en) | 1979-11-05 | 1979-11-05 | Semiconductor memory system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14347579A JPS5667958A (en) | 1979-11-05 | 1979-11-05 | Semiconductor memory system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5667958A JPS5667958A (en) | 1981-06-08 |
| JPS6349390B2 true JPS6349390B2 (enrdf_load_stackoverflow) | 1988-10-04 |
Family
ID=15339556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14347579A Granted JPS5667958A (en) | 1979-11-05 | 1979-11-05 | Semiconductor memory system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5667958A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2577338B1 (fr) * | 1985-02-12 | 1987-03-06 | Eurotechnique Sa | Procede de fabrication d'une memoire dynamique en circuit integre et memoire obtenue par ce procede |
| EP2157875B1 (en) | 2007-06-06 | 2016-10-26 | Higher Dimension Medical, Inc. | Cut, abrasion and/or puncture resistant knitted gloves |
-
1979
- 1979-11-05 JP JP14347579A patent/JPS5667958A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5667958A (en) | 1981-06-08 |
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