JPS6349386B2 - - Google Patents
Info
- Publication number
- JPS6349386B2 JPS6349386B2 JP58200392A JP20039283A JPS6349386B2 JP S6349386 B2 JPS6349386 B2 JP S6349386B2 JP 58200392 A JP58200392 A JP 58200392A JP 20039283 A JP20039283 A JP 20039283A JP S6349386 B2 JPS6349386 B2 JP S6349386B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- substrate
- layer
- oxidation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/64—Variable-capacitance diodes, e.g. varactors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58200392A JPS6092651A (ja) | 1983-10-26 | 1983-10-26 | 半導体集積回路装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58200392A JPS6092651A (ja) | 1983-10-26 | 1983-10-26 | 半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6092651A JPS6092651A (ja) | 1985-05-24 |
JPS6349386B2 true JPS6349386B2 (enrdf_load_stackoverflow) | 1988-10-04 |
Family
ID=16423560
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58200392A Granted JPS6092651A (ja) | 1983-10-26 | 1983-10-26 | 半導体集積回路装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6092651A (enrdf_load_stackoverflow) |
-
1983
- 1983-10-26 JP JP58200392A patent/JPS6092651A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6092651A (ja) | 1985-05-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0256315B1 (de) | Integrierte Bipolar- und komplementäre MOS-Transistoren auf einem gemeinsamen Substrat enthaltende Schaltung und Verfahren zu ihrer Herstellung | |
US4693782A (en) | Fabrication method of semiconductor device | |
JPH05347383A (ja) | 集積回路の製法 | |
US5554554A (en) | Process for fabricating two loads having different resistance levels in a common layer of polysilicon | |
JPS6140146B2 (enrdf_load_stackoverflow) | ||
EP0250721A2 (de) | Integrierte Bipolar- und komplementäre MOS-Transistoren auf einem gemeinsamen Substrat enthaltende Schaltung und Verfahren zu ihrer Herstellung | |
US4914497A (en) | Semiconductor integrated circuit device provided with a capacitor element having an oxidation-resist film as a dielectric and process for manufacturing the same | |
JP2700487B2 (ja) | バイポーラ集積回路及びその製造方法 | |
US4509250A (en) | Process for manufacturing a monolithic integrated circuit comprising at least one bipolar planar transistor | |
JP3923620B2 (ja) | 半導体基板の製造方法 | |
JPS6349386B2 (enrdf_load_stackoverflow) | ||
US4469535A (en) | Method of fabricating semiconductor integrated circuit devices | |
JPS60241261A (ja) | 半導体装置およびその製造方法 | |
KR930004720B1 (ko) | 반도체장치 및 그 제조방법 | |
JPS628939B2 (enrdf_load_stackoverflow) | ||
JPS6123665B2 (enrdf_load_stackoverflow) | ||
JPH05166919A (ja) | 半導体装置及びその製造方法 | |
JP2745946B2 (ja) | 半導体集積回路の製造方法 | |
JPS5854503B2 (ja) | 半導体装置の製造方法 | |
JPS5812337A (ja) | 半導体装置の製造方法 | |
JPH0247854B2 (enrdf_load_stackoverflow) | ||
JPS60182149A (ja) | 半導体集積回路の製造方法 | |
JPS63114261A (ja) | トランジスタ用の自己整合型ベース分路 | |
JPH01205561A (ja) | 半導体集積回路装置及びその製造方法 | |
JPH05335409A (ja) | 半導体装置の製造方法 |