JPS6348194B2 - - Google Patents

Info

Publication number
JPS6348194B2
JPS6348194B2 JP55182496A JP18249680A JPS6348194B2 JP S6348194 B2 JPS6348194 B2 JP S6348194B2 JP 55182496 A JP55182496 A JP 55182496A JP 18249680 A JP18249680 A JP 18249680A JP S6348194 B2 JPS6348194 B2 JP S6348194B2
Authority
JP
Japan
Prior art keywords
region
polycrystalline silicon
silicon layer
window
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55182496A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57106072A (en
Inventor
Hisao Hayashi
Masanori Noda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP55182496A priority Critical patent/JPS57106072A/ja
Publication of JPS57106072A publication Critical patent/JPS57106072A/ja
Publication of JPS6348194B2 publication Critical patent/JPS6348194B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP55182496A 1980-12-22 1980-12-22 Manufacture of semiconductor device Granted JPS57106072A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55182496A JPS57106072A (en) 1980-12-22 1980-12-22 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55182496A JPS57106072A (en) 1980-12-22 1980-12-22 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57106072A JPS57106072A (en) 1982-07-01
JPS6348194B2 true JPS6348194B2 (enrdf_load_stackoverflow) 1988-09-28

Family

ID=16119300

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55182496A Granted JPS57106072A (en) 1980-12-22 1980-12-22 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57106072A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0638422B2 (ja) * 1985-04-11 1994-05-18 ロ−ム株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS57106072A (en) 1982-07-01

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