Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony CorpfiledCriticalSony Corp
Priority to JP55182496ApriorityCriticalpatent/JPS57106072A/ja
Publication of JPS57106072ApublicationCriticalpatent/JPS57106072A/ja
Publication of JPS6348194B2publicationCriticalpatent/JPS6348194B2/ja
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
H10D48/30—Devices controlled by electric currents or voltages
H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H10D48/34—Bipolar devices
H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
Electrodes Of Semiconductors
(AREA)
Bipolar Transistors
(AREA)
Drying Of Semiconductors
(AREA)
JP55182496A1980-12-221980-12-22Manufacture of semiconductor device
GrantedJPS57106072A
(en)
Method of forming a semiconductor device on insulating substrate by selective amorphosization followed by simultaneous activation and reconversion to single crystal state