Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filedfiledCritical
Priority to JP15097879ApriorityCriticalpatent/JPS5673447A/ja
Publication of JPS5673447ApublicationCriticalpatent/JPS5673447A/ja
Publication of JPS6360551B2publicationCriticalpatent/JPS6360551B2/ja
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
H01L21/76—Making of isolation regions between components
H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
Landscapes
Engineering & Computer Science
(AREA)
Physics & Mathematics
(AREA)
Condensed Matter Physics & Semiconductors
(AREA)
General Physics & Mathematics
(AREA)
Manufacturing & Machinery
(AREA)
Computer Hardware Design
(AREA)
Microelectronics & Electronic Packaging
(AREA)
Power Engineering
(AREA)
Local Oxidation Of Silicon
(AREA)
Bipolar Transistors
(AREA)
Drying Of Semiconductors
(AREA)
Recrystallisation Techniques
(AREA)
JP15097879A1979-11-211979-11-21Manufacture of semiconductor device
GrantedJPS5673447A
(en)
Method of forming a semiconductor device on insulating substrate by selective amorphosization followed by simultaneous activation and reconversion to single crystal state