JPS6347358B2 - - Google Patents
Info
- Publication number
- JPS6347358B2 JPS6347358B2 JP57219273A JP21927382A JPS6347358B2 JP S6347358 B2 JPS6347358 B2 JP S6347358B2 JP 57219273 A JP57219273 A JP 57219273A JP 21927382 A JP21927382 A JP 21927382A JP S6347358 B2 JPS6347358 B2 JP S6347358B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- forming
- film
- laser device
- protective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 19
- 230000001681 protective effect Effects 0.000 claims description 16
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000003989 dielectric material Substances 0.000 claims 2
- 238000003776 cleavage reaction Methods 0.000 claims 1
- 230000007017 scission Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 46
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21927382A JPS59110185A (ja) | 1982-12-16 | 1982-12-16 | 半導体レ−ザ装置端面保護膜の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21927382A JPS59110185A (ja) | 1982-12-16 | 1982-12-16 | 半導体レ−ザ装置端面保護膜の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59110185A JPS59110185A (ja) | 1984-06-26 |
| JPS6347358B2 true JPS6347358B2 (https=) | 1988-09-21 |
Family
ID=16732936
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21927382A Granted JPS59110185A (ja) | 1982-12-16 | 1982-12-16 | 半導体レ−ザ装置端面保護膜の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59110185A (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0712099B2 (ja) * | 1984-12-24 | 1995-02-08 | 株式会社日立製作所 | 半導体レ−ザ素子の製造方法 |
| JP4617636B2 (ja) * | 2003-03-19 | 2011-01-26 | 住友電気工業株式会社 | 光モジュール |
| JP2012164737A (ja) * | 2011-02-04 | 2012-08-30 | Sony Corp | サブマウント、サブマウント組立体及びサブマウント組立方法 |
| WO2020188695A1 (ja) * | 2019-03-18 | 2020-09-24 | 三菱電機株式会社 | 半導体レーザ装置製造方法 |
-
1982
- 1982-12-16 JP JP21927382A patent/JPS59110185A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| APPLIED PHYSICS LETTERS=1977 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59110185A (ja) | 1984-06-26 |
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