JPS59110185A - 半導体レ−ザ装置端面保護膜の形成方法 - Google Patents

半導体レ−ザ装置端面保護膜の形成方法

Info

Publication number
JPS59110185A
JPS59110185A JP21927382A JP21927382A JPS59110185A JP S59110185 A JPS59110185 A JP S59110185A JP 21927382 A JP21927382 A JP 21927382A JP 21927382 A JP21927382 A JP 21927382A JP S59110185 A JPS59110185 A JP S59110185A
Authority
JP
Japan
Prior art keywords
semiconductor laser
film
laser device
forming
protection film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21927382A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6347358B2 (https=
Inventor
Hideo Tamura
英男 田村
Seiji Iida
飯田　清次
Katsuyoshi Yamamoto
勝義 山本
Haruki Kurihara
栗原　春樹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP21927382A priority Critical patent/JPS59110185A/ja
Publication of JPS59110185A publication Critical patent/JPS59110185A/ja
Publication of JPS6347358B2 publication Critical patent/JPS6347358B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Lasers (AREA)
JP21927382A 1982-12-16 1982-12-16 半導体レ−ザ装置端面保護膜の形成方法 Granted JPS59110185A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21927382A JPS59110185A (ja) 1982-12-16 1982-12-16 半導体レ−ザ装置端面保護膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21927382A JPS59110185A (ja) 1982-12-16 1982-12-16 半導体レ−ザ装置端面保護膜の形成方法

Publications (2)

Publication Number Publication Date
JPS59110185A true JPS59110185A (ja) 1984-06-26
JPS6347358B2 JPS6347358B2 (https=) 1988-09-21

Family

ID=16732936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21927382A Granted JPS59110185A (ja) 1982-12-16 1982-12-16 半導体レ−ザ装置端面保護膜の形成方法

Country Status (1)

Country Link
JP (1) JPS59110185A (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61150291A (ja) * 1984-12-24 1986-07-08 Hitachi Ltd 半導体レ−ザ素子の製造方法
JP2004288742A (ja) * 2003-03-19 2004-10-14 Sumitomo Electric Ind Ltd 光モジュール
JP2012164737A (ja) * 2011-02-04 2012-08-30 Sony Corp サブマウント、サブマウント組立体及びサブマウント組立方法
WO2020188695A1 (ja) * 2019-03-18 2020-09-24 三菱電機株式会社 半導体レーザ装置製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS=1977 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61150291A (ja) * 1984-12-24 1986-07-08 Hitachi Ltd 半導体レ−ザ素子の製造方法
JP2004288742A (ja) * 2003-03-19 2004-10-14 Sumitomo Electric Ind Ltd 光モジュール
JP2012164737A (ja) * 2011-02-04 2012-08-30 Sony Corp サブマウント、サブマウント組立体及びサブマウント組立方法
US8982920B2 (en) 2011-02-04 2015-03-17 Sony Corporation Submount, submount assembly, and submount assembling method
WO2020188695A1 (ja) * 2019-03-18 2020-09-24 三菱電機株式会社 半導体レーザ装置製造方法
JPWO2020188695A1 (ja) * 2019-03-18 2021-11-11 三菱電機株式会社 半導体レーザ装置製造方法
DE112019007051B4 (de) 2019-03-18 2024-04-18 Mitsubishi Electric Corporation Verfahren zum Herstellen einer Halbleiterlaservorrichtung

Also Published As

Publication number Publication date
JPS6347358B2 (https=) 1988-09-21

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