JPS634450B2 - - Google Patents
Info
- Publication number
- JPS634450B2 JPS634450B2 JP896883A JP896883A JPS634450B2 JP S634450 B2 JPS634450 B2 JP S634450B2 JP 896883 A JP896883 A JP 896883A JP 896883 A JP896883 A JP 896883A JP S634450 B2 JPS634450 B2 JP S634450B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- film
- sputtering
- substrate
- anode electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004544 sputter deposition Methods 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 25
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 description 20
- 229910004298 SiO 2 Inorganic materials 0.000 description 16
- 239000002344 surface layer Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Landscapes
- Physical Or Chemical Processes And Apparatus (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP896883A JPS59136131A (ja) | 1983-01-21 | 1983-01-21 | スパツタリング装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP896883A JPS59136131A (ja) | 1983-01-21 | 1983-01-21 | スパツタリング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59136131A JPS59136131A (ja) | 1984-08-04 |
JPS634450B2 true JPS634450B2 (enrdf_load_stackoverflow) | 1988-01-29 |
Family
ID=11707478
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP896883A Granted JPS59136131A (ja) | 1983-01-21 | 1983-01-21 | スパツタリング装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59136131A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0375321U (enrdf_load_stackoverflow) * | 1989-11-24 | 1991-07-29 |
-
1983
- 1983-01-21 JP JP896883A patent/JPS59136131A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0375321U (enrdf_load_stackoverflow) * | 1989-11-24 | 1991-07-29 |
Also Published As
Publication number | Publication date |
---|---|
JPS59136131A (ja) | 1984-08-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH061769B2 (ja) | アルミナ膜のパターニング方法 | |
JPH0697660B2 (ja) | 薄膜形成方法 | |
EP0090613B1 (en) | Improvements in methods of making layered electrical devices | |
JPS634450B2 (enrdf_load_stackoverflow) | ||
JPS6350854B2 (enrdf_load_stackoverflow) | ||
JPH0559985B2 (enrdf_load_stackoverflow) | ||
JPH0758083A (ja) | 半導体製造装置 | |
JP2548164B2 (ja) | ドライエッチング方法 | |
JPS643337B2 (enrdf_load_stackoverflow) | ||
JPS61174725A (ja) | 薄膜形成装置 | |
JP4649773B2 (ja) | イオン注入機 | |
JPH09209138A (ja) | スパッタリング方法 | |
JPH027870Y2 (enrdf_load_stackoverflow) | ||
JPS637364A (ja) | バイアススパツタ装置 | |
JP2744505B2 (ja) | シリコンスパッタリング装置 | |
KR100234542B1 (ko) | 반도체장치의 제조방법 | |
JPS58181869A (ja) | エツチング法 | |
JPS6234415B2 (enrdf_load_stackoverflow) | ||
JPS6250461A (ja) | スパツタリングによる薄膜の堆積法 | |
JPS6136376B2 (enrdf_load_stackoverflow) | ||
JPH04318164A (ja) | 薄膜形成方法 | |
KR980009673U (ko) | 반도체 제조 장치 | |
JPS62249420A (ja) | プラズマ処理装置 | |
JPH07105380B2 (ja) | プラズマ処理装置 | |
JPS59141218A (ja) | 薄膜の作製方法 |