JPS6136376B2 - - Google Patents
Info
- Publication number
- JPS6136376B2 JPS6136376B2 JP2125577A JP2125577A JPS6136376B2 JP S6136376 B2 JPS6136376 B2 JP S6136376B2 JP 2125577 A JP2125577 A JP 2125577A JP 2125577 A JP2125577 A JP 2125577A JP S6136376 B2 JPS6136376 B2 JP S6136376B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- sample stage
- ion etching
- etching
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000992 sputter etching Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 9
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000004519 grease Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 238000010849 ion bombardment Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000003472 neutralizing effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2125577A JPS53106576A (en) | 1977-02-28 | 1977-02-28 | Ion etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2125577A JPS53106576A (en) | 1977-02-28 | 1977-02-28 | Ion etching device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53106576A JPS53106576A (en) | 1978-09-16 |
| JPS6136376B2 true JPS6136376B2 (enrdf_load_stackoverflow) | 1986-08-18 |
Family
ID=12049964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2125577A Granted JPS53106576A (en) | 1977-02-28 | 1977-02-28 | Ion etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53106576A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58137225A (ja) * | 1982-02-09 | 1983-08-15 | Anelva Corp | 基板着脱機構 |
| JPS62147340U (enrdf_load_stackoverflow) * | 1987-02-10 | 1987-09-17 | ||
| JP2555093B2 (ja) * | 1987-09-16 | 1996-11-20 | 株式会社日立製作所 | ウエハの固定装置 |
-
1977
- 1977-02-28 JP JP2125577A patent/JPS53106576A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53106576A (en) | 1978-09-16 |
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