JPS6343913B2 - - Google Patents
Info
- Publication number
- JPS6343913B2 JPS6343913B2 JP60231117A JP23111785A JPS6343913B2 JP S6343913 B2 JPS6343913 B2 JP S6343913B2 JP 60231117 A JP60231117 A JP 60231117A JP 23111785 A JP23111785 A JP 23111785A JP S6343913 B2 JPS6343913 B2 JP S6343913B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- mixed crystal
- thickness
- stress
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 40
- 239000013078 crystal Substances 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 22
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 17
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 description 15
- 230000012010 growth Effects 0.000 description 6
- 239000007791 liquid phase Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 240000002329 Inga feuillei Species 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 229910005542 GaSb Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZSBXGIUJOOQZMP-JLNYLFASSA-N Matrine Chemical compound C1CC[C@H]2CN3C(=O)CCC[C@@H]3[C@@H]3[C@H]2N1CCC3 ZSBXGIUJOOQZMP-JLNYLFASSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23111785A JPS61142786A (ja) | 1985-10-18 | 1985-10-18 | 半導体レ−ザ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23111785A JPS61142786A (ja) | 1985-10-18 | 1985-10-18 | 半導体レ−ザ装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18455682A Division JPS5878490A (ja) | 1982-10-22 | 1982-10-22 | 半導体レ−ザ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61142786A JPS61142786A (ja) | 1986-06-30 |
| JPS6343913B2 true JPS6343913B2 (lv) | 1988-09-01 |
Family
ID=16918555
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23111785A Granted JPS61142786A (ja) | 1985-10-18 | 1985-10-18 | 半導体レ−ザ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61142786A (lv) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6345303U (lv) * | 1986-09-12 | 1988-03-26 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4971885A (lv) * | 1973-09-21 | 1974-07-11 | ||
| JPS49113591A (lv) * | 1973-02-26 | 1974-10-30 | ||
| JPS52127190A (en) * | 1976-04-19 | 1977-10-25 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
-
1985
- 1985-10-18 JP JP23111785A patent/JPS61142786A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49113591A (lv) * | 1973-02-26 | 1974-10-30 | ||
| JPS4971885A (lv) * | 1973-09-21 | 1974-07-11 | ||
| JPS52127190A (en) * | 1976-04-19 | 1977-10-25 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6345303U (lv) * | 1986-09-12 | 1988-03-26 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61142786A (ja) | 1986-06-30 |
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