JPS6343912B2 - - Google Patents
Info
- Publication number
- JPS6343912B2 JPS6343912B2 JP59149448A JP14944884A JPS6343912B2 JP S6343912 B2 JPS6343912 B2 JP S6343912B2 JP 59149448 A JP59149448 A JP 59149448A JP 14944884 A JP14944884 A JP 14944884A JP S6343912 B2 JPS6343912 B2 JP S6343912B2
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- semiconductor layer
- layer
- thickness
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 62
- 230000003287 optical effect Effects 0.000 description 13
- 238000005253 cladding Methods 0.000 description 9
- 230000010355 oscillation Effects 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000000725 suspension Substances 0.000 description 6
- 230000006378 damage Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000003685 thermal hair damage Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14944884A JPS6041281A (ja) | 1984-07-20 | 1984-07-20 | 半導体レ−ザ素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14944884A JPS6041281A (ja) | 1984-07-20 | 1984-07-20 | 半導体レ−ザ素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6041281A JPS6041281A (ja) | 1985-03-04 |
| JPS6343912B2 true JPS6343912B2 (fr) | 1988-09-01 |
Family
ID=15475340
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14944884A Granted JPS6041281A (ja) | 1984-07-20 | 1984-07-20 | 半導体レ−ザ素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6041281A (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6344803U (fr) * | 1986-09-11 | 1988-03-25 | ||
| JPH0248203A (ja) * | 1988-08-09 | 1990-02-19 | Koji Masuda | タイヤ用滑り止め具及びその製造方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4909645B2 (ja) * | 2006-05-31 | 2012-04-04 | 株式会社キングジム | 綴じ具 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5391683A (en) * | 1977-01-24 | 1978-08-11 | Hitachi Ltd | Semiconductor laser |
| JPS544088A (en) * | 1977-06-13 | 1979-01-12 | Hitachi Ltd | Manufacture for semiconductor laser |
-
1984
- 1984-07-20 JP JP14944884A patent/JPS6041281A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5391683A (en) * | 1977-01-24 | 1978-08-11 | Hitachi Ltd | Semiconductor laser |
| JPS544088A (en) * | 1977-06-13 | 1979-01-12 | Hitachi Ltd | Manufacture for semiconductor laser |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6344803U (fr) * | 1986-09-11 | 1988-03-25 | ||
| JPH0248203A (ja) * | 1988-08-09 | 1990-02-19 | Koji Masuda | タイヤ用滑り止め具及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6041281A (ja) | 1985-03-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5646953A (en) | Semiconductor laser device | |
| JPH08330671A (ja) | 半導体光素子 | |
| US6888870B2 (en) | Semiconductor laser and method for manufacturing the same | |
| JPS60789A (ja) | 半導体レ−ザ装置 | |
| JPS6343912B2 (fr) | ||
| JP2775950B2 (ja) | 半導体レーザ | |
| JPH0416032B2 (fr) | ||
| JP2846668B2 (ja) | ブロードエリアレーザ | |
| JPH0671121B2 (ja) | 半導体レーザ装置 | |
| JPH10209553A (ja) | 半導体レーザ素子 | |
| JPS6362292A (ja) | 半導体レ−ザ装置およびその製造方法 | |
| JPS60167488A (ja) | 半導体レ−ザ装置 | |
| JPH06196801A (ja) | 半導体レーザ装置およびその製造方法 | |
| JP3084264B2 (ja) | 半導体レーザ素子 | |
| JPS61112392A (ja) | 半導体レ−ザおよびその製造方法 | |
| JPH0695589B2 (ja) | 半導体レーザ素子の製造方法 | |
| JP2763781B2 (ja) | 半導体レーザ素子およびその製造方法 | |
| JPS6234473Y2 (fr) | ||
| JPH0256836B2 (fr) | ||
| JPH01132191A (ja) | 半導体レーザ素子 | |
| JPH01318271A (ja) | 高出力半導体レーザ | |
| JPH09307183A (ja) | 半導体レーザ | |
| JPH04212487A (ja) | 半導体レーザ装置 | |
| JPS62279690A (ja) | 半導体レ−ザ装置 | |
| JP2006303267A (ja) | 半導体レーザ装置 |