JPH0256836B2 - - Google Patents
Info
- Publication number
- JPH0256836B2 JPH0256836B2 JP59084600A JP8460084A JPH0256836B2 JP H0256836 B2 JPH0256836 B2 JP H0256836B2 JP 59084600 A JP59084600 A JP 59084600A JP 8460084 A JP8460084 A JP 8460084A JP H0256836 B2 JPH0256836 B2 JP H0256836B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gaas
- gaalas
- semiconductor laser
- current blocking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000005253 cladding Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 16
- 230000000903 blocking effect Effects 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims 1
- 238000009826 distribution Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 239000007791 liquid phase Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 201000009310 astigmatism Diseases 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8460084A JPS60226191A (ja) | 1984-04-25 | 1984-04-25 | 半導体レ−ザ素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8460084A JPS60226191A (ja) | 1984-04-25 | 1984-04-25 | 半導体レ−ザ素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60226191A JPS60226191A (ja) | 1985-11-11 |
| JPH0256836B2 true JPH0256836B2 (fr) | 1990-12-03 |
Family
ID=13835173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8460084A Granted JPS60226191A (ja) | 1984-04-25 | 1984-04-25 | 半導体レ−ザ素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60226191A (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62179789A (ja) * | 1986-02-03 | 1987-08-06 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
| JPH07114301B2 (ja) * | 1986-02-12 | 1995-12-06 | 松下電器産業株式会社 | 半導体レ−ザ装置 |
| JPS62296583A (ja) * | 1986-06-17 | 1987-12-23 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56135994A (en) * | 1980-03-28 | 1981-10-23 | Fujitsu Ltd | Semiconductor light emitting device |
-
1984
- 1984-04-25 JP JP8460084A patent/JPS60226191A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56135994A (en) * | 1980-03-28 | 1981-10-23 | Fujitsu Ltd | Semiconductor light emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60226191A (ja) | 1985-11-11 |
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