JPS6343912B2 - - Google Patents

Info

Publication number
JPS6343912B2
JPS6343912B2 JP59149448A JP14944884A JPS6343912B2 JP S6343912 B2 JPS6343912 B2 JP S6343912B2 JP 59149448 A JP59149448 A JP 59149448A JP 14944884 A JP14944884 A JP 14944884A JP S6343912 B2 JPS6343912 B2 JP S6343912B2
Authority
JP
Japan
Prior art keywords
active layer
semiconductor layer
layer
thickness
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59149448A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6041281A (ja
Inventor
Takaro Kuroda
Takashi Kajimura
Yasutoshi Kashiwada
Junichi Umeda
Kunio Aiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14944884A priority Critical patent/JPS6041281A/ja
Publication of JPS6041281A publication Critical patent/JPS6041281A/ja
Publication of JPS6343912B2 publication Critical patent/JPS6343912B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

  • Semiconductor Lasers (AREA)
JP14944884A 1984-07-20 1984-07-20 半導体レ−ザ素子 Granted JPS6041281A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14944884A JPS6041281A (ja) 1984-07-20 1984-07-20 半導体レ−ザ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14944884A JPS6041281A (ja) 1984-07-20 1984-07-20 半導体レ−ザ素子

Publications (2)

Publication Number Publication Date
JPS6041281A JPS6041281A (ja) 1985-03-04
JPS6343912B2 true JPS6343912B2 (enrdf_load_stackoverflow) 1988-09-01

Family

ID=15475340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14944884A Granted JPS6041281A (ja) 1984-07-20 1984-07-20 半導体レ−ザ素子

Country Status (1)

Country Link
JP (1) JPS6041281A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6344803U (enrdf_load_stackoverflow) * 1986-09-11 1988-03-25
JPH0248203A (ja) * 1988-08-09 1990-02-19 Koji Masuda タイヤ用滑り止め具及びその製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4909645B2 (ja) * 2006-05-31 2012-04-04 株式会社キングジム 綴じ具

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5391683A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Semiconductor laser
JPS6042639B2 (ja) * 1977-06-13 1985-09-24 株式会社日立製作所 半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6344803U (enrdf_load_stackoverflow) * 1986-09-11 1988-03-25
JPH0248203A (ja) * 1988-08-09 1990-02-19 Koji Masuda タイヤ用滑り止め具及びその製造方法

Also Published As

Publication number Publication date
JPS6041281A (ja) 1985-03-04

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