JPS634346B2 - - Google Patents
Info
- Publication number
- JPS634346B2 JPS634346B2 JP54125401A JP12540179A JPS634346B2 JP S634346 B2 JPS634346 B2 JP S634346B2 JP 54125401 A JP54125401 A JP 54125401A JP 12540179 A JP12540179 A JP 12540179A JP S634346 B2 JPS634346 B2 JP S634346B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- laser light
- thickness
- ion implantation
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
- H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
Landscapes
- Formation Of Insulating Films (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12540179A JPS5650511A (en) | 1979-10-01 | 1979-10-01 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12540179A JPS5650511A (en) | 1979-10-01 | 1979-10-01 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5650511A JPS5650511A (en) | 1981-05-07 |
| JPS634346B2 true JPS634346B2 (cg-RX-API-DMAC10.html) | 1988-01-28 |
Family
ID=14909211
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12540179A Granted JPS5650511A (en) | 1979-10-01 | 1979-10-01 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5650511A (cg-RX-API-DMAC10.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5595484U (cg-RX-API-DMAC10.html) * | 1979-12-27 | 1980-07-02 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5546503A (en) * | 1978-09-28 | 1980-04-01 | Toshiba Corp | Method of making semiconductor device |
-
1979
- 1979-10-01 JP JP12540179A patent/JPS5650511A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5650511A (en) | 1981-05-07 |