JPS6342422B2 - - Google Patents
Info
- Publication number
- JPS6342422B2 JPS6342422B2 JP53040977A JP4097778A JPS6342422B2 JP S6342422 B2 JPS6342422 B2 JP S6342422B2 JP 53040977 A JP53040977 A JP 53040977A JP 4097778 A JP4097778 A JP 4097778A JP S6342422 B2 JPS6342422 B2 JP S6342422B2
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- gate
- fet
- insulated gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 17
- 230000005669 field effect Effects 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
- Electronic Switches (AREA)
- Amplifiers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4097778A JPS54132174A (en) | 1978-04-06 | 1978-04-06 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4097778A JPS54132174A (en) | 1978-04-06 | 1978-04-06 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54132174A JPS54132174A (en) | 1979-10-13 |
JPS6342422B2 true JPS6342422B2 (zh) | 1988-08-23 |
Family
ID=12595491
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4097778A Granted JPS54132174A (en) | 1978-04-06 | 1978-04-06 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54132174A (zh) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5154778A (zh) * | 1974-11-08 | 1976-05-14 | Fujitsu Ltd | |
JPS5181579A (zh) * | 1975-01-16 | 1976-07-16 | Hitachi Ltd | |
JPS532087A (en) * | 1976-06-29 | 1978-01-10 | Toshiba Corp | Input protection circuit |
-
1978
- 1978-04-06 JP JP4097778A patent/JPS54132174A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5154778A (zh) * | 1974-11-08 | 1976-05-14 | Fujitsu Ltd | |
JPS5181579A (zh) * | 1975-01-16 | 1976-07-16 | Hitachi Ltd | |
JPS532087A (en) * | 1976-06-29 | 1978-01-10 | Toshiba Corp | Input protection circuit |
Also Published As
Publication number | Publication date |
---|---|
JPS54132174A (en) | 1979-10-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4086642A (en) | Protective circuit and device for metal-oxide-semiconductor field effect transistor and method for fabricating the device | |
US4481521A (en) | Insulated gate field effect transistor provided with a protective device for a gate insulating film | |
KR20010015521A (ko) | 신뢰성있는 확산 레지스터 및 확산 커패시터 | |
US4514646A (en) | Semiconductor integrated circuit device including a protective resistor arrangement for output transistors | |
US7999324B2 (en) | Semiconductor device including overcurrent protection element | |
KR940009582B1 (ko) | Mos형 반도체장치 | |
US5227327A (en) | Method for making high impedance pull-up and pull-down input protection resistors for active integrated circuits | |
JPH0653497A (ja) | 入出力保護回路を備えた半導体装置 | |
JPH0531313B2 (zh) | ||
US4922316A (en) | Infant protection device | |
JPS6342422B2 (zh) | ||
KR940007468B1 (ko) | 반도체 장치 | |
JP2737629B2 (ja) | Cmos構成の出力回路を有する半導体装置 | |
JPS6360547B2 (zh) | ||
US5121179A (en) | Higher impedance pull-up and pull-down input protection resistors for MIS transistor integrated circuits | |
JP2669245B2 (ja) | 半導体装置 | |
JPH0478022B2 (zh) | ||
JPS622704B2 (zh) | ||
JPS6115593B2 (zh) | ||
US6445601B1 (en) | Electrostatic discharge protection circuit | |
JPS629228B2 (zh) | ||
JP2920013B2 (ja) | 半導体静電保護回路 | |
JPH039559A (ja) | 半導体集積装置 | |
JPH0563191A (ja) | 半導体装置 | |
JPH0319231Y2 (zh) |