JPS6342352B2 - - Google Patents

Info

Publication number
JPS6342352B2
JPS6342352B2 JP59208784A JP20878484A JPS6342352B2 JP S6342352 B2 JPS6342352 B2 JP S6342352B2 JP 59208784 A JP59208784 A JP 59208784A JP 20878484 A JP20878484 A JP 20878484A JP S6342352 B2 JPS6342352 B2 JP S6342352B2
Authority
JP
Japan
Prior art keywords
pattern
bubble
layer
disk
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59208784A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6187295A (ja
Inventor
Niwaji Majima
Hiromichi Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59208784A priority Critical patent/JPS6187295A/ja
Priority to CA000470553A priority patent/CA1260754A/en
Priority to EP84402694A priority patent/EP0147322B1/en
Priority to DE8484402694T priority patent/DE3484677D1/de
Priority to US06/686,521 priority patent/US4597826A/en
Publication of JPS6187295A publication Critical patent/JPS6187295A/ja
Publication of JPS6342352B2 publication Critical patent/JPS6342352B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
JP59208784A 1983-12-26 1984-10-04 イオン注入バブルメモリ素子の製造方法 Granted JPS6187295A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59208784A JPS6187295A (ja) 1984-10-04 1984-10-04 イオン注入バブルメモリ素子の製造方法
CA000470553A CA1260754A (en) 1983-12-26 1984-12-19 Method for forming patterns and apparatus used for carrying out the same
EP84402694A EP0147322B1 (en) 1983-12-26 1984-12-21 Method for forming a pattern having a fine gap.
DE8484402694T DE3484677D1 (de) 1983-12-26 1984-12-21 Verfahren zum herstellen von einem muster mit feinen zwischenraeumen.
US06/686,521 US4597826A (en) 1983-12-26 1984-12-26 Method for forming patterns

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59208784A JPS6187295A (ja) 1984-10-04 1984-10-04 イオン注入バブルメモリ素子の製造方法

Publications (2)

Publication Number Publication Date
JPS6187295A JPS6187295A (ja) 1986-05-02
JPS6342352B2 true JPS6342352B2 (enrdf_load_stackoverflow) 1988-08-23

Family

ID=16562044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59208784A Granted JPS6187295A (ja) 1983-12-26 1984-10-04 イオン注入バブルメモリ素子の製造方法

Country Status (1)

Country Link
JP (1) JPS6187295A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6187295A (ja) 1986-05-02

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