DE3484677D1 - Verfahren zum herstellen von einem muster mit feinen zwischenraeumen. - Google Patents
Verfahren zum herstellen von einem muster mit feinen zwischenraeumen.Info
- Publication number
- DE3484677D1 DE3484677D1 DE8484402694T DE3484677T DE3484677D1 DE 3484677 D1 DE3484677 D1 DE 3484677D1 DE 8484402694 T DE8484402694 T DE 8484402694T DE 3484677 T DE3484677 T DE 3484677T DE 3484677 D1 DE3484677 D1 DE 3484677D1
- Authority
- DE
- Germany
- Prior art keywords
- pattern
- producing
- fine spaces
- spaces
- fine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
- H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0335—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0338—Process specially adapted to improve the resolution of the mask
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Thin Magnetic Films (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58244334A JPH0695503B2 (ja) | 1983-12-26 | 1983-12-26 | パターン形成方法およびその実施に使用する装置 |
JP24528783A JPS60140725A (ja) | 1983-12-28 | 1983-12-28 | パタ−ン形成方法 |
JP59208784A JPS6187295A (ja) | 1984-10-04 | 1984-10-04 | イオン注入バブルメモリ素子の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3484677D1 true DE3484677D1 (de) | 1991-07-11 |
Family
ID=27328926
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484402694T Expired - Fee Related DE3484677D1 (de) | 1983-12-26 | 1984-12-21 | Verfahren zum herstellen von einem muster mit feinen zwischenraeumen. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4597826A (de) |
EP (1) | EP0147322B1 (de) |
CA (1) | CA1260754A (de) |
DE (1) | DE3484677D1 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5245335A (en) * | 1984-03-06 | 1993-09-14 | Comsource Systems Corp. | Transceiver system for communication over wire laid along the path of guided/vehicles |
US4696098A (en) * | 1986-06-24 | 1987-09-29 | Advanced Micro Devices, Inc. | Metallization technique for integrated circuit structures |
US4707218A (en) * | 1986-10-28 | 1987-11-17 | International Business Machines Corporation | Lithographic image size reduction |
US4838992A (en) * | 1987-05-27 | 1989-06-13 | Northern Telecom Limited | Method of etching aluminum alloys in semi-conductor wafers |
US4758306A (en) * | 1987-08-17 | 1988-07-19 | International Business Machines Corporation | Stud formation method optimizing insulator gap-fill and metal hole-fill |
US5407867A (en) * | 1988-05-12 | 1995-04-18 | Mitsubishki Denki Kabushiki Kaisha | Method of forming a thin film on surface of semiconductor substrate |
US5174881A (en) * | 1988-05-12 | 1992-12-29 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for forming a thin film on surface of semiconductor substrate |
JP2501873B2 (ja) * | 1988-06-23 | 1996-05-29 | シャープ株式会社 | 薄膜磁気ヘッドの製造方法 |
FR2680276B1 (fr) * | 1991-08-05 | 1997-04-25 | Matra Mhs | Procede de controle du profil de gravure d'une couche d'un circuit integre. |
WO1993012520A1 (en) * | 1991-12-17 | 1993-06-24 | Certus Magnetics | Magnetic disk medium with designed textured surfaces and controlled surface roughness and method of providing same |
US5768075A (en) | 1991-12-17 | 1998-06-16 | Baradun R&D Ltd. | Disk medium w/magnetically filled features aligned in rows and columns |
US5300813A (en) | 1992-02-26 | 1994-04-05 | International Business Machines Corporation | Refractory metal capped low resistivity metal conductor lines and vias |
JP2787646B2 (ja) * | 1992-11-27 | 1998-08-20 | 三菱電機株式会社 | 半導体装置の製造方法 |
EP0794616B1 (de) * | 1996-03-08 | 2003-01-29 | Matsushita Electric Industrial Co., Ltd. | Elektronisches Bauteil und Herstellungsverfahren |
JP4208305B2 (ja) * | 1998-09-17 | 2009-01-14 | 株式会社東芝 | マスクパターンの形成方法 |
US6277704B1 (en) | 2000-05-24 | 2001-08-21 | Micron Technology, Inc. | Microelectronic device fabricating method, method of forming a pair of conductive device components of different base widths from a common deposited conductive layer |
GB0104611D0 (en) * | 2001-02-23 | 2001-04-11 | Koninkl Philips Electronics Nv | Printing plates |
US7288126B2 (en) * | 2003-09-02 | 2007-10-30 | Rechargeable Battery Corporation | Battery cells having improved power characteristics and methods of manufacturing same |
JP4510796B2 (ja) * | 2006-11-22 | 2010-07-28 | 株式会社アルバック | 磁気記憶媒体の製造方法 |
CN105023835B (zh) * | 2015-06-17 | 2019-04-02 | 泰科天润半导体科技(北京)有限公司 | 介质掩膜的制造方法、利用该掩膜刻蚀或离子注入的方法 |
JP2017215561A (ja) | 2016-05-30 | 2017-12-07 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | ギャップフィリング組成物、およびポリマーを含んでなる組成物を用いたパターン形成方法 |
WO2017207452A1 (en) * | 2016-05-30 | 2017-12-07 | Az Electronic Materials (Luxembourg) S.A.R.L. | Gap filling composition and pattern forming method using composition containing polymer |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3563809A (en) * | 1968-08-05 | 1971-02-16 | Hughes Aircraft Co | Method of making semiconductor devices with ion beams |
US4172758A (en) * | 1975-11-07 | 1979-10-30 | Rockwell International Corporation | Magnetic bubble domain device fabrication technique |
US4053349A (en) * | 1976-02-02 | 1977-10-11 | Intel Corporation | Method for forming a narrow gap |
JPS5925308B2 (ja) * | 1978-04-14 | 1984-06-16 | 株式会社日立製作所 | 磁気バブルメモリ素子及びその製造方法 |
JPS54155771A (en) * | 1978-05-29 | 1979-12-08 | Nec Corp | Pattern forming method |
US4400865A (en) * | 1980-07-08 | 1983-08-30 | International Business Machines Corporation | Self-aligned metal process for integrated circuit metallization |
-
1984
- 1984-12-19 CA CA000470553A patent/CA1260754A/en not_active Expired
- 1984-12-21 EP EP84402694A patent/EP0147322B1/de not_active Expired - Lifetime
- 1984-12-21 DE DE8484402694T patent/DE3484677D1/de not_active Expired - Fee Related
- 1984-12-26 US US06/686,521 patent/US4597826A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0147322B1 (de) | 1991-06-05 |
EP0147322A2 (de) | 1985-07-03 |
CA1260754A (en) | 1989-09-26 |
US4597826A (en) | 1986-07-01 |
EP0147322A3 (en) | 1987-04-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |