DE3578729D1 - Verfahren zur bildung eines leitermusters. - Google Patents
Verfahren zur bildung eines leitermusters.Info
- Publication number
- DE3578729D1 DE3578729D1 DE8585113017T DE3578729T DE3578729D1 DE 3578729 D1 DE3578729 D1 DE 3578729D1 DE 8585113017 T DE8585113017 T DE 8585113017T DE 3578729 T DE3578729 T DE 3578729T DE 3578729 D1 DE3578729 D1 DE 3578729D1
- Authority
- DE
- Germany
- Prior art keywords
- forming
- ladder pattern
- ladder
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
- H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
- H01L29/66863—Lateral single gate transistors
- H01L29/66878—Processes wherein the final gate is made before the formation, e.g. activation anneal, of the source and drain regions in the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21631784A JPS6196735A (ja) | 1984-10-17 | 1984-10-17 | 導体パタ−ン形成方法 |
JP21631684A JPS6196765A (ja) | 1984-10-17 | 1984-10-17 | 金属パタ−ン形成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3578729D1 true DE3578729D1 (de) | 1990-08-23 |
Family
ID=26521361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585113017T Expired - Lifetime DE3578729D1 (de) | 1984-10-17 | 1985-10-14 | Verfahren zur bildung eines leitermusters. |
Country Status (3)
Country | Link |
---|---|
US (1) | US4674174A (de) |
EP (1) | EP0178619B1 (de) |
DE (1) | DE3578729D1 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4821085A (en) * | 1985-05-01 | 1989-04-11 | Texas Instruments Incorporated | VLSI local interconnect structure |
US4811078A (en) * | 1985-05-01 | 1989-03-07 | Texas Instruments Incorporated | Integrated circuit device and process with tin capacitors |
US4814854A (en) * | 1985-05-01 | 1989-03-21 | Texas Instruments Incorporated | Integrated circuit device and process with tin-gate transistor |
US4956308A (en) * | 1987-01-20 | 1990-09-11 | Itt Corporation | Method of making self-aligned field-effect transistor |
US4782032A (en) * | 1987-01-12 | 1988-11-01 | Itt Gallium Arsenide Technology Center, A Division Of Itt Corporation | Method of making self-aligned GaAs devices having TiWNx gate/interconnect |
US5027166A (en) * | 1987-12-04 | 1991-06-25 | Sanken Electric Co., Ltd. | High voltage, high speed Schottky semiconductor device and method of fabrication |
US5025303A (en) * | 1988-02-26 | 1991-06-18 | Texas Instruments Incorporated | Product of pillar alignment and formation process |
US4935805A (en) * | 1988-05-16 | 1990-06-19 | Eaton Corporation | T-type undercut electrical contact on a semiconductor substrate |
US4923827A (en) * | 1988-05-16 | 1990-05-08 | Eaton Corporation | T-type undercut electrical contact process on a semiconductor substrate |
JP2606900B2 (ja) * | 1988-09-08 | 1997-05-07 | 株式会社東芝 | パターン形成方法 |
US5153754A (en) * | 1989-06-30 | 1992-10-06 | General Electric Company | Multi-layer address lines for amorphous silicon liquid crystal display devices |
GB2237929A (en) * | 1989-10-23 | 1991-05-15 | Philips Electronic Associated | A method of manufacturing a semiconductor device |
DE69128123T2 (de) * | 1990-08-31 | 1998-03-05 | Texas Instruments Inc | Verfahren zum Herstellen selbst-ausrichtender bipolarer Transistoren mit Heteroübergang |
US5182218A (en) * | 1991-02-25 | 1993-01-26 | Sumitomo Electric Industries, Ltd. | Production methods for compound semiconductor device having lightly doped drain structure |
US5176792A (en) * | 1991-10-28 | 1993-01-05 | At&T Bell Laboratories | Method for forming patterned tungsten layers |
FR2686734B1 (fr) * | 1992-01-24 | 1994-03-11 | Thomson Composants Microondes | Procede de realisation d'un transistor. |
US5536666A (en) * | 1994-06-03 | 1996-07-16 | Itt Corporation | Method for fabricating a planar ion-implanted GaAs MESFET with improved open-channel burnout characteristics |
KR19980060606A (ko) * | 1996-12-31 | 1998-10-07 | 김영환 | 반도체 소자의 금속배선 형성 방법 |
US6420099B1 (en) * | 1999-08-02 | 2002-07-16 | Infineon Technologies Ag | Tungsten hard mask for dry etching aluminum-containing layers |
JP2004071015A (ja) * | 2002-08-05 | 2004-03-04 | Fujitsu Ltd | 薄膜磁気ヘッドの製造方法 |
NL1026013C2 (nl) | 2004-04-23 | 2005-10-25 | Otb Group Bv | Werkwijze en inrichting voor het nauwkeurig aanbrengen van structuren op een substraat. |
WO2010010176A1 (fr) * | 2008-07-25 | 2010-01-28 | Commissariat A L'energie Atomique | Procede de microstructuration d'une couche de diamant |
US9917027B2 (en) * | 2015-12-30 | 2018-03-13 | Globalfoundries Singapore Pte. Ltd. | Integrated circuits with aluminum via structures and methods for fabricating the same |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1954499A1 (de) * | 1969-10-29 | 1971-05-06 | Siemens Ag | Verfahren zur Herstellung von Halbleiterschaltkreisen mit Leitbahnen |
US4132586A (en) * | 1977-12-20 | 1979-01-02 | International Business Machines Corporation | Selective dry etching of substrates |
US4362597A (en) * | 1981-01-19 | 1982-12-07 | Bell Telephone Laboratories, Incorporated | Method of fabricating high-conductivity silicide-on-polysilicon structures for MOS devices |
CA1200624A (en) * | 1981-08-10 | 1986-02-11 | Susumu Muramoto | Method for the manufacture of semiconductor device using refractory metal in a lift-off step |
US4400257A (en) * | 1982-12-21 | 1983-08-23 | Rca Corporation | Method of forming metal lines |
US4586063A (en) * | 1984-04-02 | 1986-04-29 | Oki Electric Industry Co., Ltd. | Schottky barrier gate FET including tungsten-aluminum alloy |
-
1985
- 1985-10-11 US US06/786,825 patent/US4674174A/en not_active Expired - Lifetime
- 1985-10-14 EP EP85113017A patent/EP0178619B1/de not_active Expired
- 1985-10-14 DE DE8585113017T patent/DE3578729D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0178619A3 (en) | 1988-09-14 |
US4674174A (en) | 1987-06-23 |
EP0178619B1 (de) | 1990-07-18 |
EP0178619A2 (de) | 1986-04-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |