JPS6341879B2 - - Google Patents
Info
- Publication number
- JPS6341879B2 JPS6341879B2 JP59109632A JP10963284A JPS6341879B2 JP S6341879 B2 JPS6341879 B2 JP S6341879B2 JP 59109632 A JP59109632 A JP 59109632A JP 10963284 A JP10963284 A JP 10963284A JP S6341879 B2 JPS6341879 B2 JP S6341879B2
- Authority
- JP
- Japan
- Prior art keywords
- container
- high dissociation
- dissociation pressure
- single crystal
- compound semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10963284A JPS60255692A (ja) | 1984-05-31 | 1984-05-31 | 高解離圧化合物半導体単結晶引き上げ装置 |
| DE8484109948T DE3472577D1 (en) | 1983-08-31 | 1984-08-21 | Apparatus for growing single crystals of dissociative compounds |
| DE198484109948T DE139157T1 (de) | 1983-08-31 | 1984-08-21 | Vorrichtung zur zuechtung von einkristallinen zersetzbaren verbindungen. |
| EP84109948A EP0139157B1 (en) | 1983-08-31 | 1984-08-21 | Apparatus for growing single crystals of dissociative compounds |
| US06/644,840 US4704257A (en) | 1983-08-31 | 1984-08-28 | Apparatus for growing single crystals of dissociative compounds |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10963284A JPS60255692A (ja) | 1984-05-31 | 1984-05-31 | 高解離圧化合物半導体単結晶引き上げ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60255692A JPS60255692A (ja) | 1985-12-17 |
| JPS6341879B2 true JPS6341879B2 (enrdf_load_stackoverflow) | 1988-08-19 |
Family
ID=14515195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10963284A Granted JPS60255692A (ja) | 1983-08-31 | 1984-05-31 | 高解離圧化合物半導体単結晶引き上げ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60255692A (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62197390A (ja) * | 1986-02-25 | 1987-09-01 | Mitsubishi Metal Corp | 二重構造容器 |
| JPS62297291A (ja) * | 1986-06-18 | 1987-12-24 | Res Dev Corp Of Japan | 砒化ガリウム単結晶引き上げ装置 |
| DE68917052T2 (de) * | 1988-08-19 | 1994-12-22 | Mitsubishi Materials Corp | Verfahren zur Einkristallzüchtung von zersetzbaren Halbleiter-Verbindungen. |
| DE68917054T2 (de) * | 1988-08-19 | 1995-01-05 | Mitsubishi Materials Corp | Verfahren zur Einkristallzüchtung von zersetzbaren Halbleiter-Verbindungen. |
| JPH085745B2 (ja) * | 1992-09-22 | 1996-01-24 | 三菱マテリアル株式会社 | 化合物半導体引き上げ装置 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS516871A (ja) * | 1974-06-03 | 1976-01-20 | Little Inc A | Mukikagobutsunoyojugoseinotamenohannoyoki oyobi sochi |
-
1984
- 1984-05-31 JP JP10963284A patent/JPS60255692A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60255692A (ja) | 1985-12-17 |
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