JPS6348837B2 - - Google Patents
Info
- Publication number
- JPS6348837B2 JPS6348837B2 JP58157883A JP15788383A JPS6348837B2 JP S6348837 B2 JPS6348837 B2 JP S6348837B2 JP 58157883 A JP58157883 A JP 58157883A JP 15788383 A JP15788383 A JP 15788383A JP S6348837 B2 JPS6348837 B2 JP S6348837B2
- Authority
- JP
- Japan
- Prior art keywords
- arsenic
- container
- gas
- boron oxide
- quartz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15788383A JPS6051698A (ja) | 1983-08-31 | 1983-08-31 | 砒素化合物単結晶成長装置 |
| EP84109948A EP0139157B1 (en) | 1983-08-31 | 1984-08-21 | Apparatus for growing single crystals of dissociative compounds |
| DE198484109948T DE139157T1 (de) | 1983-08-31 | 1984-08-21 | Vorrichtung zur zuechtung von einkristallinen zersetzbaren verbindungen. |
| DE8484109948T DE3472577D1 (en) | 1983-08-31 | 1984-08-21 | Apparatus for growing single crystals of dissociative compounds |
| US06/644,840 US4704257A (en) | 1983-08-31 | 1984-08-28 | Apparatus for growing single crystals of dissociative compounds |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15788383A JPS6051698A (ja) | 1983-08-31 | 1983-08-31 | 砒素化合物単結晶成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6051698A JPS6051698A (ja) | 1985-03-23 |
| JPS6348837B2 true JPS6348837B2 (enrdf_load_stackoverflow) | 1988-09-30 |
Family
ID=15659496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15788383A Granted JPS6051698A (ja) | 1983-08-31 | 1983-08-31 | 砒素化合物単結晶成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6051698A (enrdf_load_stackoverflow) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS516871A (ja) * | 1974-06-03 | 1976-01-20 | Little Inc A | Mukikagobutsunoyojugoseinotamenohannoyoki oyobi sochi |
| JPS6041037B2 (ja) * | 1981-12-04 | 1985-09-13 | 三菱マテリアル株式会社 | 半導体用高解離圧化合物単結晶の製造装置 |
-
1983
- 1983-08-31 JP JP15788383A patent/JPS6051698A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6051698A (ja) | 1985-03-23 |
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