JPS6348837B2 - - Google Patents

Info

Publication number
JPS6348837B2
JPS6348837B2 JP58157883A JP15788383A JPS6348837B2 JP S6348837 B2 JPS6348837 B2 JP S6348837B2 JP 58157883 A JP58157883 A JP 58157883A JP 15788383 A JP15788383 A JP 15788383A JP S6348837 B2 JPS6348837 B2 JP S6348837B2
Authority
JP
Japan
Prior art keywords
arsenic
container
gas
boron oxide
quartz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58157883A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6051698A (ja
Inventor
Kenji Tomizawa
Koichi Sasa
Yasushi Shimanuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Shingijutsu Kaihatsu Jigyodan
Original Assignee
Mitsubishi Metal Corp
Shingijutsu Kaihatsu Jigyodan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp, Shingijutsu Kaihatsu Jigyodan filed Critical Mitsubishi Metal Corp
Priority to JP15788383A priority Critical patent/JPS6051698A/ja
Priority to EP84109948A priority patent/EP0139157B1/en
Priority to DE198484109948T priority patent/DE139157T1/de
Priority to DE8484109948T priority patent/DE3472577D1/de
Priority to US06/644,840 priority patent/US4704257A/en
Publication of JPS6051698A publication Critical patent/JPS6051698A/ja
Publication of JPS6348837B2 publication Critical patent/JPS6348837B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10Crucibles or containers for supporting the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP15788383A 1983-08-31 1983-08-31 砒素化合物単結晶成長装置 Granted JPS6051698A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP15788383A JPS6051698A (ja) 1983-08-31 1983-08-31 砒素化合物単結晶成長装置
EP84109948A EP0139157B1 (en) 1983-08-31 1984-08-21 Apparatus for growing single crystals of dissociative compounds
DE198484109948T DE139157T1 (de) 1983-08-31 1984-08-21 Vorrichtung zur zuechtung von einkristallinen zersetzbaren verbindungen.
DE8484109948T DE3472577D1 (en) 1983-08-31 1984-08-21 Apparatus for growing single crystals of dissociative compounds
US06/644,840 US4704257A (en) 1983-08-31 1984-08-28 Apparatus for growing single crystals of dissociative compounds

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15788383A JPS6051698A (ja) 1983-08-31 1983-08-31 砒素化合物単結晶成長装置

Publications (2)

Publication Number Publication Date
JPS6051698A JPS6051698A (ja) 1985-03-23
JPS6348837B2 true JPS6348837B2 (enrdf_load_stackoverflow) 1988-09-30

Family

ID=15659496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15788383A Granted JPS6051698A (ja) 1983-08-31 1983-08-31 砒素化合物単結晶成長装置

Country Status (1)

Country Link
JP (1) JPS6051698A (enrdf_load_stackoverflow)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS516871A (ja) * 1974-06-03 1976-01-20 Little Inc A Mukikagobutsunoyojugoseinotamenohannoyoki oyobi sochi
JPS6041037B2 (ja) * 1981-12-04 1985-09-13 三菱マテリアル株式会社 半導体用高解離圧化合物単結晶の製造装置

Also Published As

Publication number Publication date
JPS6051698A (ja) 1985-03-23

Similar Documents

Publication Publication Date Title
US4704257A (en) Apparatus for growing single crystals of dissociative compounds
JP4135239B2 (ja) 半導体結晶およびその製造方法ならびに製造装置
CN101054723A (zh) 一种r面蓝宝石晶体的生长方法
Capper Bulk crystal growth: methods and materials
JPS60251191A (ja) 高解離圧化合物単結晶成長方法
JP2002068896A (ja) 窒化物単結晶製造方法及び製造装置
JP2979770B2 (ja) 単結晶の製造装置
JPS6348837B2 (enrdf_load_stackoverflow)
JPS6341879B2 (enrdf_load_stackoverflow)
JP2690420B2 (ja) 単結晶の製造装置
JPH0364477B2 (enrdf_load_stackoverflow)
JP3158661B2 (ja) 高解離圧単結晶の製造方法及び製造装置
JP3938674B2 (ja) 化合物半導体単結晶の製造方法
JPH03193689A (ja) 化合物半導体の結晶製造方法
JPH059096A (ja) シリコン単結晶の製造方法
JP2611336B2 (ja) 高解離圧化合物半導体処理装置
JP2830315B2 (ja) 高解離圧単結晶の製造装置
JPS60122791A (ja) 液体封止結晶引上方法
JP3392245B2 (ja) 化合物半導体単結晶の製造方法
JP2005200279A (ja) シリコンインゴットの製造方法、太陽電池
JPH05306190A (ja) シリコン単結晶の製造方法
JPH10182277A (ja) 単結晶製造装置及びそれを用いた単結晶製造方法
JPS606916B2 (ja) 化合物半導体単結晶の製造方法
Szofran et al. Reduction of defects in germanium-silicon
JPS5913480B2 (ja) 2重融液シ−ルの引上法による半導体用高解離圧化合物単結晶の成長法およびその装置