JPS6341210B2 - - Google Patents

Info

Publication number
JPS6341210B2
JPS6341210B2 JP57075165A JP7516582A JPS6341210B2 JP S6341210 B2 JPS6341210 B2 JP S6341210B2 JP 57075165 A JP57075165 A JP 57075165A JP 7516582 A JP7516582 A JP 7516582A JP S6341210 B2 JPS6341210 B2 JP S6341210B2
Authority
JP
Japan
Prior art keywords
single crystal
amorphous silicon
layer
temperature
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57075165A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58192320A (ja
Inventor
Yasuo Kunii
Michiharu Tanabe
Kenji Kajama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57075165A priority Critical patent/JPS58192320A/ja
Publication of JPS58192320A publication Critical patent/JPS58192320A/ja
Publication of JPS6341210B2 publication Critical patent/JPS6341210B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3238—
    • H10P14/3802—
    • H10P14/22—
    • H10P14/2905—
    • H10P14/3244—
    • H10P14/3411—
    • H10P14/3458—
    • H10P14/3806—
    • H10P14/3808—
    • H10P14/3818—

Landscapes

  • Drying Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
JP57075165A 1982-05-07 1982-05-07 半導体装置の製造方法 Granted JPS58192320A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57075165A JPS58192320A (ja) 1982-05-07 1982-05-07 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57075165A JPS58192320A (ja) 1982-05-07 1982-05-07 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58192320A JPS58192320A (ja) 1983-11-09
JPS6341210B2 true JPS6341210B2 (cg-RX-API-DMAC10.html) 1988-08-16

Family

ID=13568311

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57075165A Granted JPS58192320A (ja) 1982-05-07 1982-05-07 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58192320A (cg-RX-API-DMAC10.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2689985B2 (ja) * 1988-05-30 1997-12-10 富士通株式会社 半導体デバイスの製造方法及び製造装置
WO2005055308A1 (en) * 2003-12-03 2005-06-16 S.O.I.Tec Silicon On Insulator Technologies Process for improving the surface roughness of a wafer

Also Published As

Publication number Publication date
JPS58192320A (ja) 1983-11-09

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