JPS6338327U - - Google Patents
Info
- Publication number
- JPS6338327U JPS6338327U JP12947586U JP12947586U JPS6338327U JP S6338327 U JPS6338327 U JP S6338327U JP 12947586 U JP12947586 U JP 12947586U JP 12947586 U JP12947586 U JP 12947586U JP S6338327 U JPS6338327 U JP S6338327U
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor device
- bonding pad
- film thickness
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
- H01L2224/05557—Shape in side view comprising protrusions or indentations
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
第１図は本考案の一実施例を示す断面図、第２
図と第３図は夫々本考案の他の実施例を示す断面
図、第４図は従来構造の半導体装置アルミニウム
パツド部の構成を示す断面図、第５図は他の従来
のパツド構造を示す断面図、第６図はアルミニウ
ムパツド中に生じるＳｉ柱の説明図である。
１……半導体基板、２……フイルド酸化膜、３
……ＰＳＧ膜、４……アルミニウムパツド、４―
ａ……アルミニウムパツド中のＳｉ柱（粒）、４
１……純アルミニウム膜、４２……アルミニウム
パツド膜、４３……純アルミニウムの緩衝膜、５
……パツシベーシヨン膜、６……保護膜。
Fig. 1 is a sectional view showing one embodiment of the present invention;
3 and 3 are cross-sectional views showing other embodiments of the present invention, FIG. 4 is a cross-sectional view showing the configuration of an aluminum pad portion of a semiconductor device having a conventional structure, and FIG. 5 is a cross-sectional view showing another conventional pad structure. The cross-sectional view shown in FIG. 6 is an explanatory diagram of Si pillars generated in the aluminum pad. 1...Semiconductor substrate, 2...Field oxide film, 3
...PSG film, 4...Aluminum pad, 4-
a... Si pillar (grain) in aluminum pad, 4
1... Pure aluminum film, 42... Aluminum pad film, 43... Pure aluminum buffer film, 5
...passivation film, 6...protective film.
Claims (1)
介して外部リードとの接続のため設けるボンデイ
ングパツドを有する半導体装置において、前記ボ
ンデイングパツドをＳｉを含有するアルミニウム
層で構成し、パツドあるいはパツドにおいてのボ
ンデイングに必要な領域の膜厚を配線層等の膜厚
に比較して十分薄くしたことを特徴とする半導体
装置。 In a semiconductor device having a bonding pad provided on a semiconductor substrate for connection with an external lead via a field oxide film, a PSG film, etc., the bonding pad is composed of an aluminum layer containing Si, and 1. A semiconductor device characterized in that a film thickness in a region required for bonding is sufficiently thin compared to a film thickness of a wiring layer, etc.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12947586U JPS6338327U (en) | 1986-08-27 | 1986-08-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12947586U JPS6338327U (en) | 1986-08-27 | 1986-08-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6338327U true JPS6338327U (en) | 1988-03-11 |
Family
ID=31026076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12947586U Pending JPS6338327U (en) | 1986-08-27 | 1986-08-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6338327U (en) |
-
1986
- 1986-08-27 JP JP12947586U patent/JPS6338327U/ja active Pending
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