JPS6337615A - プラズマ電極 - Google Patents
プラズマ電極Info
- Publication number
- JPS6337615A JPS6337615A JP18090886A JP18090886A JPS6337615A JP S6337615 A JPS6337615 A JP S6337615A JP 18090886 A JP18090886 A JP 18090886A JP 18090886 A JP18090886 A JP 18090886A JP S6337615 A JPS6337615 A JP S6337615A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- quartz
- plasma
- electrode plates
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010453 quartz Substances 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000011247 coating layer Substances 0.000 claims abstract description 7
- 235000012431 wafers Nutrition 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 7
- 239000000428 dust Substances 0.000 abstract description 7
- 239000012535 impurity Substances 0.000 abstract description 7
- 230000002411 adverse Effects 0.000 abstract description 6
- 229910052799 carbon Inorganic materials 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 230000006866 deterioration Effects 0.000 abstract 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000012212 insulator Substances 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002781 deodorant agent Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18090886A JPS6337615A (ja) | 1986-07-31 | 1986-07-31 | プラズマ電極 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18090886A JPS6337615A (ja) | 1986-07-31 | 1986-07-31 | プラズマ電極 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6337615A true JPS6337615A (ja) | 1988-02-18 |
JPH0556853B2 JPH0556853B2 (enrdf_load_stackoverflow) | 1993-08-20 |
Family
ID=16091400
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18090886A Granted JPS6337615A (ja) | 1986-07-31 | 1986-07-31 | プラズマ電極 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6337615A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4955649A (en) * | 1988-02-29 | 1990-09-11 | Tel Sagami Limited | Apparatus for holding plates |
US9108804B2 (en) | 2011-09-16 | 2015-08-18 | Wamgroup S.P.A. | Screw conveyor intermediate support |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5784137A (en) * | 1980-11-14 | 1982-05-26 | Matsushita Electric Ind Co Ltd | Plasma chemical evaporation |
JPS6157517U (enrdf_load_stackoverflow) * | 1984-09-19 | 1986-04-17 | ||
JPS61116843A (ja) * | 1984-11-13 | 1986-06-04 | Sharp Corp | 絶縁薄膜の製造方法 |
-
1986
- 1986-07-31 JP JP18090886A patent/JPS6337615A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5784137A (en) * | 1980-11-14 | 1982-05-26 | Matsushita Electric Ind Co Ltd | Plasma chemical evaporation |
JPS6157517U (enrdf_load_stackoverflow) * | 1984-09-19 | 1986-04-17 | ||
JPS61116843A (ja) * | 1984-11-13 | 1986-06-04 | Sharp Corp | 絶縁薄膜の製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4955649A (en) * | 1988-02-29 | 1990-09-11 | Tel Sagami Limited | Apparatus for holding plates |
US9108804B2 (en) | 2011-09-16 | 2015-08-18 | Wamgroup S.P.A. | Screw conveyor intermediate support |
Also Published As
Publication number | Publication date |
---|---|
JPH0556853B2 (enrdf_load_stackoverflow) | 1993-08-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH0779122B2 (ja) | ダイヤモンド・コーティングを施した静電チャック | |
KR20150006405A (ko) | 내부식성 적층 세라믹스 부재 | |
US4424096A (en) | R-F Electrode type workholder and methods of supporting workpieces during R-F powered reactive treatment | |
JPH1064986A (ja) | 汚染抑制層を有する基板支持チャック及びその製造方法 | |
JPH033250A (ja) | 基板保持装置 | |
JPS6337615A (ja) | プラズマ電極 | |
US6193803B1 (en) | Substrate holding apparatus for processing semiconductors | |
US4873942A (en) | Plasma enhanced chemical vapor deposition wafer holding fixture | |
JP2006066857A (ja) | 双極型静電チャック | |
JPS63190173A (ja) | プラズマ処理方法 | |
JPH0774451B2 (ja) | 成膜装置 | |
JP2890493B2 (ja) | プラズマ処理装置及びプラズマ処理方法 | |
JP6348321B2 (ja) | エッチング装置 | |
JPS6358920A (ja) | プラズマ電極 | |
JPS622544A (ja) | 無声放電型ガスプラズマ処理装置 | |
JP2547035B2 (ja) | プラズマ処理装置 | |
JP3259452B2 (ja) | プラズマcvd装置に用いる電極及びプラズマcvd装置 | |
JP3259453B2 (ja) | プラズマcvd装置に用いる電極及びプラズマcvd装置 | |
JPH01200629A (ja) | ドライエッチング装置 | |
JPH09283495A (ja) | 電極および放電発生装置 | |
JPH05275350A (ja) | 半導体製造装置 | |
JP3214182B2 (ja) | 成膜装置 | |
JPS59139641A (ja) | 静電吸着装置の製造方法 | |
JPS59161828A (ja) | 反応装置 | |
JPH01253238A (ja) | プラズマ処理装置 |