JPS633447B2 - - Google Patents
Info
- Publication number
- JPS633447B2 JPS633447B2 JP54089917A JP8991779A JPS633447B2 JP S633447 B2 JPS633447 B2 JP S633447B2 JP 54089917 A JP54089917 A JP 54089917A JP 8991779 A JP8991779 A JP 8991779A JP S633447 B2 JPS633447 B2 JP S633447B2
- Authority
- JP
- Japan
- Prior art keywords
- junction
- layer
- mask
- semiconductor substrate
- deep
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 64
- 239000004065 semiconductor Substances 0.000 claims description 50
- 239000012535 impurity Substances 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 150000002500 ions Chemical class 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 description 17
- 238000009792 diffusion process Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- -1 Phosphorus ions Chemical class 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8991779A JPS5615035A (en) | 1979-07-17 | 1979-07-17 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8991779A JPS5615035A (en) | 1979-07-17 | 1979-07-17 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5615035A JPS5615035A (en) | 1981-02-13 |
| JPS633447B2 true JPS633447B2 (fr) | 1988-01-23 |
Family
ID=13984051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8991779A Granted JPS5615035A (en) | 1979-07-17 | 1979-07-17 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5615035A (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57136368A (en) * | 1981-02-17 | 1982-08-23 | Fujitsu Ltd | Manufacture of mis transistor |
| JPS57138157A (en) * | 1981-02-20 | 1982-08-26 | Fujitsu Ltd | Manufacture of semiconductor device |
| US4542580A (en) * | 1983-02-14 | 1985-09-24 | Prime Computer, Inc. | Method of fabricating n-type silicon regions and associated contacts |
| KR100974221B1 (ko) * | 2008-04-17 | 2010-08-06 | 엘지전자 주식회사 | 레이저 어닐링을 이용한 태양전지의 선택적 에미터형성방법 및 이를 이용한 태양전지의 제조방법 |
| KR101037316B1 (ko) * | 2010-09-30 | 2011-05-26 | (유)에스엔티 | 태양전지의 선택적 에미터 형성장치 |
| CN104170095B (zh) * | 2012-03-14 | 2016-10-19 | Imec非营利协会 | 用于制造具有镀敷触点的光伏电池的方法 |
| JP2014072474A (ja) * | 2012-10-01 | 2014-04-21 | Sharp Corp | 光電変換素子の製造方法及び光電変換素子 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4926456A (fr) * | 1972-07-11 | 1974-03-08 |
-
1979
- 1979-07-17 JP JP8991779A patent/JPS5615035A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4926456A (fr) * | 1972-07-11 | 1974-03-08 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5615035A (en) | 1981-02-13 |
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