JPS6333353B2 - - Google Patents
Info
- Publication number
- JPS6333353B2 JPS6333353B2 JP53101095A JP10109578A JPS6333353B2 JP S6333353 B2 JPS6333353 B2 JP S6333353B2 JP 53101095 A JP53101095 A JP 53101095A JP 10109578 A JP10109578 A JP 10109578A JP S6333353 B2 JPS6333353 B2 JP S6333353B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- solid
- photoconductor
- state imaging
- imaging device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000003384 imaging method Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims 2
- 230000000903 blocking effect Effects 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 206010034972 Photosensitivity reaction Diseases 0.000 description 4
- 230000036211 photosensitivity Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10109578A JPS5527772A (en) | 1978-08-18 | 1978-08-18 | Solid state pickup device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10109578A JPS5527772A (en) | 1978-08-18 | 1978-08-18 | Solid state pickup device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5527772A JPS5527772A (en) | 1980-02-28 |
JPS6333353B2 true JPS6333353B2 (de) | 1988-07-05 |
Family
ID=14291523
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10109578A Granted JPS5527772A (en) | 1978-08-18 | 1978-08-18 | Solid state pickup device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5527772A (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55163881A (en) * | 1979-06-08 | 1980-12-20 | Hitachi Ltd | Manufacture of light receiving surface |
JPS5753182A (en) * | 1980-09-17 | 1982-03-30 | Fuji Photo Film Co Ltd | Solid-state image pickup device |
JPS58168274A (ja) * | 1982-03-29 | 1983-10-04 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
US4583002A (en) * | 1983-06-06 | 1986-04-15 | Fuji Photo Film Co., Ltd. | Imaging sensor with automatic sensitivity control comprising voltage multiplying means |
-
1978
- 1978-08-18 JP JP10109578A patent/JPS5527772A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5527772A (en) | 1980-02-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4271420A (en) | Solid-state image pickup device | |
US5619049A (en) | CCD-type solid state image pickup with overflow drain structure | |
US4956686A (en) | Two color infrared focal plane array | |
US4236829A (en) | Solid-state image sensor | |
EP0214408B1 (de) | Festkörperbildwandler | |
US4354104A (en) | Solid-state image pickup device | |
US4688098A (en) | Solid state image sensor with means for removing excess photocharges | |
JPH02503618A (ja) | 固体イメージセンサ | |
JPH06500431A (ja) | フォトダイオードとccdエレメントとの間に転送ゲートを有するイメージセンサ | |
US4360732A (en) | Infrared charge transfer device (CTD) system | |
JPS6343952B2 (de) | ||
JPH0414543B2 (de) | ||
JPH05211321A (ja) | アバランシェフォトダイオード、及びそれを具備する信号処理装置 | |
US4341954A (en) | Photo-electric converting apparatus | |
JPH0513748A (ja) | 固体撮像素子 | |
EP0453530B1 (de) | Festkörper-bildsensor | |
JPS6333353B2 (de) | ||
US4789888A (en) | Solid-state image sensor | |
EP0543391B1 (de) | Photoelektrischer Wandler und Steuerverfahren dafür | |
JPH0430192B2 (de) | ||
JPS6042666B2 (ja) | 固体撮像装置 | |
JP2509592B2 (ja) | 積層型固体撮像装置 | |
JPS5846066B2 (ja) | 光電変換装置 | |
JPH0666920B2 (ja) | 撮像装置 | |
Chikamura et al. | A 1/2-in. CCD image sensor overlaid with a hydrogenated amorphous silicon |