JPH0430192B2 - - Google Patents

Info

Publication number
JPH0430192B2
JPH0430192B2 JP58052730A JP5273083A JPH0430192B2 JP H0430192 B2 JPH0430192 B2 JP H0430192B2 JP 58052730 A JP58052730 A JP 58052730A JP 5273083 A JP5273083 A JP 5273083A JP H0430192 B2 JPH0430192 B2 JP H0430192B2
Authority
JP
Japan
Prior art keywords
solid
storage diode
electrode
layer
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58052730A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59178769A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP58052730A priority Critical patent/JPS59178769A/ja
Publication of JPS59178769A publication Critical patent/JPS59178769A/ja
Publication of JPH0430192B2 publication Critical patent/JPH0430192B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14665Imagers using a photoconductor layer

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP58052730A 1983-03-30 1983-03-30 固体撮像装置 Granted JPS59178769A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58052730A JPS59178769A (ja) 1983-03-30 1983-03-30 固体撮像装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58052730A JPS59178769A (ja) 1983-03-30 1983-03-30 固体撮像装置

Publications (2)

Publication Number Publication Date
JPS59178769A JPS59178769A (ja) 1984-10-11
JPH0430192B2 true JPH0430192B2 (de) 1992-05-21

Family

ID=12923039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58052730A Granted JPS59178769A (ja) 1983-03-30 1983-03-30 固体撮像装置

Country Status (1)

Country Link
JP (1) JPS59178769A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4572130B2 (ja) * 2005-03-09 2010-10-27 富士フイルム株式会社 固体撮像素子
DE102008046035A1 (de) * 2007-09-07 2009-04-16 Dongbu Hitek Co., Ltd. Bildsensor und Verfahren zu seiner Herstellung
US7999292B2 (en) * 2007-09-07 2011-08-16 Dongbu Hitek Co., Ltd. Image sensor and manufacturing method thereof
KR100997299B1 (ko) * 2007-09-07 2010-11-29 주식회사 동부하이텍 이미지센서 및 그 제조방법
KR101002121B1 (ko) * 2007-12-27 2010-12-16 주식회사 동부하이텍 이미지센서 및 그 제조방법
KR100882990B1 (ko) * 2007-12-27 2009-02-12 주식회사 동부하이텍 이미지센서 및 그 제조방법
KR100922924B1 (ko) 2007-12-28 2009-10-22 주식회사 동부하이텍 이미지센서 및 그 제조방법
JP5501262B2 (ja) * 2011-02-04 2014-05-21 富士フイルム株式会社 固体撮像素子の製造方法、固体撮像素子、撮像装置

Also Published As

Publication number Publication date
JPS59178769A (ja) 1984-10-11

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