JPS6331094B2 - - Google Patents

Info

Publication number
JPS6331094B2
JPS6331094B2 JP57111498A JP11149882A JPS6331094B2 JP S6331094 B2 JPS6331094 B2 JP S6331094B2 JP 57111498 A JP57111498 A JP 57111498A JP 11149882 A JP11149882 A JP 11149882A JP S6331094 B2 JPS6331094 B2 JP S6331094B2
Authority
JP
Japan
Prior art keywords
semiconductor wafer
wafer
auxiliary heating
heating source
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57111498A
Other languages
English (en)
Japanese (ja)
Other versions
JPS593921A (ja
Inventor
Hiroshi Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Original Assignee
Ushio Denki KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK filed Critical Ushio Denki KK
Priority to JP11149882A priority Critical patent/JPS593921A/ja
Publication of JPS593921A publication Critical patent/JPS593921A/ja
Publication of JPS6331094B2 publication Critical patent/JPS6331094B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP11149882A 1982-06-30 1982-06-30 半導体ウエハ−を光照射で加熱する方法 Granted JPS593921A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11149882A JPS593921A (ja) 1982-06-30 1982-06-30 半導体ウエハ−を光照射で加熱する方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11149882A JPS593921A (ja) 1982-06-30 1982-06-30 半導体ウエハ−を光照射で加熱する方法

Publications (2)

Publication Number Publication Date
JPS593921A JPS593921A (ja) 1984-01-10
JPS6331094B2 true JPS6331094B2 (en:Method) 1988-06-22

Family

ID=14562810

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11149882A Granted JPS593921A (ja) 1982-06-30 1982-06-30 半導体ウエハ−を光照射で加熱する方法

Country Status (1)

Country Link
JP (1) JPS593921A (en:Method)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5155337A (en) * 1989-12-21 1992-10-13 North Carolina State University Method and apparatus for controlling rapid thermal processing systems
DE19821007A1 (de) * 1998-05-11 1999-11-25 Steag Rtp Systems Gmbh Verfahren und Vorrichtung zum thermischen Behandeln von Substraten
DE19952017A1 (de) * 1999-10-28 2001-05-17 Steag Rtp Systems Gmbh Verfahren und Vorrichtung zum thermischen Behandeln von Substraten

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58175826A (ja) * 1981-12-04 1983-10-15 Ushio Inc 半導体を光照射で加熱する方法

Also Published As

Publication number Publication date
JPS593921A (ja) 1984-01-10

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