JPS63303059A - 真空処理装置 - Google Patents

真空処理装置

Info

Publication number
JPS63303059A
JPS63303059A JP13624587A JP13624587A JPS63303059A JP S63303059 A JPS63303059 A JP S63303059A JP 13624587 A JP13624587 A JP 13624587A JP 13624587 A JP13624587 A JP 13624587A JP S63303059 A JPS63303059 A JP S63303059A
Authority
JP
Japan
Prior art keywords
sputtering
chamber
chambers
vacuum
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13624587A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0159353B2 (enrdf_load_stackoverflow
Inventor
Koji Nomura
野村　耕二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokuda Seisakusho Co Ltd
Original Assignee
Tokuda Seisakusho Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuda Seisakusho Co Ltd filed Critical Tokuda Seisakusho Co Ltd
Priority to JP13624587A priority Critical patent/JPS63303059A/ja
Publication of JPS63303059A publication Critical patent/JPS63303059A/ja
Publication of JPH0159353B2 publication Critical patent/JPH0159353B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP13624587A 1987-05-30 1987-05-30 真空処理装置 Granted JPS63303059A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13624587A JPS63303059A (ja) 1987-05-30 1987-05-30 真空処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13624587A JPS63303059A (ja) 1987-05-30 1987-05-30 真空処理装置

Publications (2)

Publication Number Publication Date
JPS63303059A true JPS63303059A (ja) 1988-12-09
JPH0159353B2 JPH0159353B2 (enrdf_load_stackoverflow) 1989-12-15

Family

ID=15170679

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13624587A Granted JPS63303059A (ja) 1987-05-30 1987-05-30 真空処理装置

Country Status (1)

Country Link
JP (1) JPS63303059A (enrdf_load_stackoverflow)

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5319701A (en) * 1989-01-23 1994-06-07 First City, Texas-Dallas Method and apparatus for performing an automated collect call
EP0684630A2 (en) * 1989-05-19 1995-11-29 Applied Materials, Inc. Workpiece transport system and method of transporting workpiece in same
US6871656B2 (en) 1997-05-27 2005-03-29 Tokyo Electron Limited Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process
US6921456B2 (en) 2000-07-26 2005-07-26 Tokyo Electron Limited High pressure processing chamber for semiconductor substrate
US6926012B2 (en) 1999-11-02 2005-08-09 Tokyo Electron Limited Method for supercritical processing of multiple workpieces
US6926798B2 (en) 1999-11-02 2005-08-09 Tokyo Electron Limited Apparatus for supercritical processing of a workpiece
US7001468B1 (en) 2002-02-15 2006-02-21 Tokyo Electron Limited Pressure energized pressure vessel opening and closing device and method of providing therefor
US7017637B2 (en) 2001-09-25 2006-03-28 Dainippon Screen Mfg. Co. Ltd. Thin film forming apparatus and thin film forming method
US7021635B2 (en) 2003-02-06 2006-04-04 Tokyo Electron Limited Vacuum chuck utilizing sintered material and method of providing thereof
US7077917B2 (en) 2003-02-10 2006-07-18 Tokyo Electric Limited High-pressure processing chamber for a semiconductor wafer
US7140393B2 (en) 2004-12-22 2006-11-28 Tokyo Electron Limited Non-contact shuttle valve for flow diversion in high pressure systems
US7163380B2 (en) 2003-07-29 2007-01-16 Tokyo Electron Limited Control of fluid flow in the processing of an object with a fluid
US7186093B2 (en) 2004-10-05 2007-03-06 Tokyo Electron Limited Method and apparatus for cooling motor bearings of a high pressure pump
US7208411B2 (en) 2000-04-25 2007-04-24 Tokyo Electron Limited Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
US7225820B2 (en) 2003-02-10 2007-06-05 Tokyo Electron Limited High-pressure processing chamber for a semiconductor wafer
US7250374B2 (en) 2004-06-30 2007-07-31 Tokyo Electron Limited System and method for processing a substrate using supercritical carbon dioxide processing
US7270137B2 (en) 2003-04-28 2007-09-18 Tokyo Electron Limited Apparatus and method of securing a workpiece during high-pressure processing
US7291565B2 (en) 2005-02-15 2007-11-06 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
US7307019B2 (en) 2004-09-29 2007-12-11 Tokyo Electron Limited Method for supercritical carbon dioxide processing of fluoro-carbon films
US7380984B2 (en) 2005-03-28 2008-06-03 Tokyo Electron Limited Process flow thermocouple
US7434590B2 (en) 2004-12-22 2008-10-14 Tokyo Electron Limited Method and apparatus for clamping a substrate in a high pressure processing system
US7435447B2 (en) 2005-02-15 2008-10-14 Tokyo Electron Limited Method and system for determining flow conditions in a high pressure processing system
US7491036B2 (en) 2004-11-12 2009-02-17 Tokyo Electron Limited Method and system for cooling a pump
US7494107B2 (en) 2005-03-30 2009-02-24 Supercritical Systems, Inc. Gate valve for plus-atmospheric pressure semiconductor process vessels
US7524383B2 (en) 2005-05-25 2009-04-28 Tokyo Electron Limited Method and system for passivating a processing chamber

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54153740A (en) * 1978-05-25 1979-12-04 Ulvac Corp Continuous vacuum treatment apparatus
JPS5877239A (ja) * 1981-11-04 1983-05-10 Ulvac Corp 連続式真空処理装置
JPS59179786A (ja) * 1983-03-30 1984-10-12 Hitachi Ltd 連続スパツタ装置
JPS59208074A (ja) * 1983-05-13 1984-11-26 Toshiba Corp 枚葉式膜形成装置
JPS6155926A (ja) * 1984-08-27 1986-03-20 Nec Corp 半導体製造装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54153740A (en) * 1978-05-25 1979-12-04 Ulvac Corp Continuous vacuum treatment apparatus
JPS5877239A (ja) * 1981-11-04 1983-05-10 Ulvac Corp 連続式真空処理装置
JPS59179786A (ja) * 1983-03-30 1984-10-12 Hitachi Ltd 連続スパツタ装置
JPS59208074A (ja) * 1983-05-13 1984-11-26 Toshiba Corp 枚葉式膜形成装置
JPS6155926A (ja) * 1984-08-27 1986-03-20 Nec Corp 半導体製造装置

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5319701A (en) * 1989-01-23 1994-06-07 First City, Texas-Dallas Method and apparatus for performing an automated collect call
EP0684630A2 (en) * 1989-05-19 1995-11-29 Applied Materials, Inc. Workpiece transport system and method of transporting workpiece in same
US6871656B2 (en) 1997-05-27 2005-03-29 Tokyo Electron Limited Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process
US7060422B2 (en) 1999-11-02 2006-06-13 Tokyo Electron Limited Method of supercritical processing of a workpiece
US6926012B2 (en) 1999-11-02 2005-08-09 Tokyo Electron Limited Method for supercritical processing of multiple workpieces
US6926798B2 (en) 1999-11-02 2005-08-09 Tokyo Electron Limited Apparatus for supercritical processing of a workpiece
US7208411B2 (en) 2000-04-25 2007-04-24 Tokyo Electron Limited Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
US6921456B2 (en) 2000-07-26 2005-07-26 Tokyo Electron Limited High pressure processing chamber for semiconductor substrate
US7255772B2 (en) 2000-07-26 2007-08-14 Tokyo Electron Limited High pressure processing chamber for semiconductor substrate
US7017637B2 (en) 2001-09-25 2006-03-28 Dainippon Screen Mfg. Co. Ltd. Thin film forming apparatus and thin film forming method
US7001468B1 (en) 2002-02-15 2006-02-21 Tokyo Electron Limited Pressure energized pressure vessel opening and closing device and method of providing therefor
US7021635B2 (en) 2003-02-06 2006-04-04 Tokyo Electron Limited Vacuum chuck utilizing sintered material and method of providing thereof
US7077917B2 (en) 2003-02-10 2006-07-18 Tokyo Electric Limited High-pressure processing chamber for a semiconductor wafer
US7225820B2 (en) 2003-02-10 2007-06-05 Tokyo Electron Limited High-pressure processing chamber for a semiconductor wafer
US7270137B2 (en) 2003-04-28 2007-09-18 Tokyo Electron Limited Apparatus and method of securing a workpiece during high-pressure processing
US7163380B2 (en) 2003-07-29 2007-01-16 Tokyo Electron Limited Control of fluid flow in the processing of an object with a fluid
US7250374B2 (en) 2004-06-30 2007-07-31 Tokyo Electron Limited System and method for processing a substrate using supercritical carbon dioxide processing
US7307019B2 (en) 2004-09-29 2007-12-11 Tokyo Electron Limited Method for supercritical carbon dioxide processing of fluoro-carbon films
US7186093B2 (en) 2004-10-05 2007-03-06 Tokyo Electron Limited Method and apparatus for cooling motor bearings of a high pressure pump
US7491036B2 (en) 2004-11-12 2009-02-17 Tokyo Electron Limited Method and system for cooling a pump
US7140393B2 (en) 2004-12-22 2006-11-28 Tokyo Electron Limited Non-contact shuttle valve for flow diversion in high pressure systems
US7434590B2 (en) 2004-12-22 2008-10-14 Tokyo Electron Limited Method and apparatus for clamping a substrate in a high pressure processing system
US7291565B2 (en) 2005-02-15 2007-11-06 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
US7435447B2 (en) 2005-02-15 2008-10-14 Tokyo Electron Limited Method and system for determining flow conditions in a high pressure processing system
US7380984B2 (en) 2005-03-28 2008-06-03 Tokyo Electron Limited Process flow thermocouple
US7494107B2 (en) 2005-03-30 2009-02-24 Supercritical Systems, Inc. Gate valve for plus-atmospheric pressure semiconductor process vessels
US7524383B2 (en) 2005-05-25 2009-04-28 Tokyo Electron Limited Method and system for passivating a processing chamber

Also Published As

Publication number Publication date
JPH0159353B2 (enrdf_load_stackoverflow) 1989-12-15

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