JPS6329833B2 - - Google Patents
Info
- Publication number
- JPS6329833B2 JPS6329833B2 JP10913579A JP10913579A JPS6329833B2 JP S6329833 B2 JPS6329833 B2 JP S6329833B2 JP 10913579 A JP10913579 A JP 10913579A JP 10913579 A JP10913579 A JP 10913579A JP S6329833 B2 JPS6329833 B2 JP S6329833B2
- Authority
- JP
- Japan
- Prior art keywords
- storage device
- fixed storage
- circuit
- rom
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000003860 storage Methods 0.000 claims description 97
- 230000005669 field effect Effects 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 239000011159 matrix material Substances 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 17
- 238000009792 diffusion process Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
Landscapes
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10913579A JPS5633873A (en) | 1979-08-29 | 1979-08-29 | Read only memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10913579A JPS5633873A (en) | 1979-08-29 | 1979-08-29 | Read only memory device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5633873A JPS5633873A (en) | 1981-04-04 |
| JPS6329833B2 true JPS6329833B2 (de) | 1988-06-15 |
Family
ID=14502463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10913579A Granted JPS5633873A (en) | 1979-08-29 | 1979-08-29 | Read only memory device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5633873A (de) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5771589A (en) * | 1980-10-20 | 1982-05-04 | Sanyo Electric Co Ltd | Memory exclusively used for read-out of semiconductor |
| JPS57172591A (en) * | 1981-04-17 | 1982-10-23 | Toshiba Corp | Read-only semiconductor storage device |
| JPS5818959A (ja) * | 1981-07-27 | 1983-02-03 | Seiko Epson Corp | メモリ・セル配列 |
| US4602354A (en) * | 1983-01-10 | 1986-07-22 | Ncr Corporation | X-and-OR memory array |
| US4570239A (en) * | 1983-01-24 | 1986-02-11 | Motorola, Inc. | Series read-only-memory having capacitive bootstrap precharging circuitry |
| JPS6166299A (ja) * | 1984-09-07 | 1986-04-05 | Nec Corp | 読出し専用半導体記憶装置 |
| JP2594638B2 (ja) * | 1989-02-09 | 1997-03-26 | 富士通株式会社 | 半導体記憶装置 |
| JPH03241598A (ja) * | 1990-02-19 | 1991-10-28 | Fujitsu Ltd | シグネチャー回路 |
-
1979
- 1979-08-29 JP JP10913579A patent/JPS5633873A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5633873A (en) | 1981-04-04 |
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