JPS63296217A - 両面露光型マスクアライナのウエハ−吸着方法とその吸着構造 - Google Patents
両面露光型マスクアライナのウエハ−吸着方法とその吸着構造Info
- Publication number
- JPS63296217A JPS63296217A JP61246249A JP24624986A JPS63296217A JP S63296217 A JPS63296217 A JP S63296217A JP 61246249 A JP61246249 A JP 61246249A JP 24624986 A JP24624986 A JP 24624986A JP S63296217 A JPS63296217 A JP S63296217A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- mask
- exposure
- exposure mask
- suction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims abstract description 10
- 238000001179 sorption measurement Methods 0.000 claims description 6
- 230000006837 decompression Effects 0.000 claims description 5
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 abstract 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 74
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61246249A JPS63296217A (ja) | 1986-10-16 | 1986-10-16 | 両面露光型マスクアライナのウエハ−吸着方法とその吸着構造 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61246249A JPS63296217A (ja) | 1986-10-16 | 1986-10-16 | 両面露光型マスクアライナのウエハ−吸着方法とその吸着構造 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63296217A true JPS63296217A (ja) | 1988-12-02 |
JPH0533808B2 JPH0533808B2 (enrdf_load_stackoverflow) | 1993-05-20 |
Family
ID=17145718
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61246249A Granted JPS63296217A (ja) | 1986-10-16 | 1986-10-16 | 両面露光型マスクアライナのウエハ−吸着方法とその吸着構造 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63296217A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009194147A (ja) * | 2008-02-14 | 2009-08-27 | Seiko Instruments Inc | ウエハ露光装置及びウエハ露光方法 |
JP2010182997A (ja) * | 2009-02-09 | 2010-08-19 | Seiko Instruments Inc | ウエハ露光装置及びウエハ露光方法 |
-
1986
- 1986-10-16 JP JP61246249A patent/JPS63296217A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009194147A (ja) * | 2008-02-14 | 2009-08-27 | Seiko Instruments Inc | ウエハ露光装置及びウエハ露光方法 |
JP2010182997A (ja) * | 2009-02-09 | 2010-08-19 | Seiko Instruments Inc | ウエハ露光装置及びウエハ露光方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0533808B2 (enrdf_load_stackoverflow) | 1993-05-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |